Device made of single-crystal silicon
First Claim
1. A device made of single-crystal silicon having a first side, a second side, which is situated opposite to the first side, and a third side, which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending, in a first area, in a 111 plane of the single-crystal silicon, wherein the third side extends, in a second area, in a 110 plane of the single-crystal silicon.
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Accused Products
Abstract
A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
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Citations
8 Claims
- 1. A device made of single-crystal silicon having a first side, a second side, which is situated opposite to the first side, and a third side, which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending, in a first area, in a 111 plane of the single-crystal silicon, wherein the third side extends, in a second area, in a 110 plane of the single-crystal silicon.
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5. A method for producing a device made of single-crystal silicon, comprising:
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(A) supplying a substrate made of single-crystal silicon having a first side, and a second side which is situated opposite to the first side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the substrate having a thickness between the first side and the second side; (B) providing a first mask having a first opening with a first opening width, on the first side of the substrate; (C) providing a second mask, having a second opening with a second opening width, on the second side of the substrate, the first opening and the second opening being situated diametrically opposite to one another, the first opening width being greater than the second opening width, and the second opening width being greater than predefined by the thickness of the substrate and the angle of the 111 plane of the single-crystal silicon starting from the first opening width; and
,(D) KOH etching the substrate from the first and the second sides, a third side being formed which extends from the first side to the second side, the third side extending in a first area in a 111 plane of the single-crystal silicon and in the second area in a 110 plane of the single-crystal silicon. - View Dependent Claims (6, 7, 8)
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Specification