Semiconductor Switching Module

• US 20090008772A1
• Filed: 12/17/2004
• Published: 01/08/2009
• Est. Priority Date: 12/17/2004
• Status: Active Grant

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Seitz, Johann, Apfelbacher, Walter, Reichenbach, Norbert
• Granted Patent: US 7,692,293 B2
• Time in Patent Office: Days
• US Class Current: 257/718
• CPC Class Codes: H01L 2224/2402 Laminated, e.g. MCM-L type
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/82007 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

A semiconductor switching module includes a power semiconductor element that is embodied in planar technology. In at least one embodiment, the power semiconductor element is provided with a base layer, a copper layer, and at least one power semiconductor chip that is mounted on the copper layer, and another electrically conducting layer which covers at least one load terminal of the power semiconductor chip. According to at least one embodiment of the invention, devices are provided for safely connecting the load terminal to a load circuit. The devices are configured such that a contact area thereof presses in a planar manner onto the electrically conducting layer.

Claims

1. A semiconductor switching module, comprising:

a power semiconductor element embodied in planar technology and including a base layer, a copper layer, at least one power semiconductor chip fitted on the copper layer, and a further electrically conductive layer, which covers at least one load terminal of the power semiconductor chip; and

means for reliably connecting the load terminal to a load circuit to be switched, the means including at least one contact device and at least one prestress device, the at least one prestress device being formed such that the at least one contact device presses with a contact area areally onto the further electrically conductive layer,

and the contact area including an area form corresponding to an area form of the load terminal.

2. The semiconductor switching module as claimed in claim 1, wherein the further electrically conductive layer is a copper layer.

3. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device is formed as a hollow body for receiving a control electrode.

4. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device is formed in two parts, wherein the two parts bear against one another with a curvature area.

5. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device includes at least one tapering portion.

6. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device is made of soft-annealed copper.

7. The semiconductor switching module as claimed in claim 1, wherein the at least one prestress device includes a clip, having at least one bulge, and at least one fixing device.

8. The semiconductor switching module as claimed in claim 1, wherein the at least one prestress device is part of a housing of the semiconductor switching module.

9. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device and the at least one prestress device are formed in one piece as resilient contact devices.

10. The semiconductor switching module as claimed in claim 1, wherein a cable is connectable to the at least one contact device.

11. The semiconductor switching module as claimed in claim 1, wherein the at least one contact device is formed in such a way that to serve as a heat accumulator.

12. The semiconductor switching module as claimed in claim 1, wherein a further copper layer is provided on a side of the power semiconductor element opposite to the side with the power semiconductor chip, said further copper layer being connected to a heat sink.

13. The semiconductor switching module as claimed in claim 2, wherein the at least one contact device is formed as a hollow body for receiving a control electrode.

14. The semiconductor switching module as claimed in claim 2, wherein the at least one contact device is formed in two parts, wherein the two parts bear against one another with a curvature area.

15. A semiconductor switching module, comprising:

a power semiconductor element including a base layer, a copper layer, at least one power semiconductor chip on the copper layer, and a further electrically conductive layer, to cover at least one load terminal of the power semiconductor chip;

at least one contact device; and

at least one prestress device, the at least one prestress device being formed such that a contact area of the at least one contact device presses in a planer manner onto the further electrically conductive layer.

16. The semiconductor switching module as claimed in claim 15, wherein the further electrically conductive layer is a copper layer.

17. The semiconductor switching module as claimed in claim 15, wherein the at least one contact device is formed as a hollow body for receiving a control electrode.

18. The semiconductor switching module as claimed in claim 15, wherein the at least one contact device is formed in two parts, wherein the two parts bear against one another with a curvature area.

19. The semiconductor switching module as claimed in claim 15, wherein the at least one contact device includes at least one tapering portion.