Fabrication of Self-Aligned Gallium Arsenide Mosfets Using Damascene Gate Methods
First Claim
1. A method for fabricating a MOSFET device, the method comprising:
- forming a dummy gate over a substrate;
implanting source-drain extensions into the substrate adjacent the dummy gate;
forming dummy spacers along the sidewalls of the dummy gate and over a portion of the source-drain extensions;
defining the source-drain regions adjacent the source drain extensions;
forming contacts to the source-drain regions;
removing the dummy gate and the dummy spacers to form a gate opening;
depositing in-situ a passivation layer in the gate opening;
forming an oxide layer on the passivation layer;
depositing ex-situ a dielectric layer over the oxide layer; and
depositing a gate metal over the dielectric layer to form a gate stack in the gate opening.
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Accused Products
Abstract
A method for fabricating a gallium arsenide MOSFET device is presented. A dummy gate is formed over a gallium arsenide substrate. Source-drain extensions are implanted into the substrate adjacent the dummy gate. Dummy spacers are formed along dummy gate sidewalls and over a portion of the source-drain extensions. Source-drain regions are implanted. Insulating spacers are formed on dummy oxide spacer sidewalls. A conductive layer is formed over the source-drain regions. The conductive layer is annealed to form contacts to the source-drain regions. The dummy gate and the dummy oxide spacers are removed to form a gate opening. A passivation layer is in-situ deposited in the gate opening. The surface of the passivation layer is oxidized to create an oxide layer. A dielectric layer is ex-situ deposited over the oxide layer. A gate metal is deposited over the dielectric layer to form a gate stack in the gate opening.
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Citations
20 Claims
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1. A method for fabricating a MOSFET device, the method comprising:
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forming a dummy gate over a substrate; implanting source-drain extensions into the substrate adjacent the dummy gate; forming dummy spacers along the sidewalls of the dummy gate and over a portion of the source-drain extensions; defining the source-drain regions adjacent the source drain extensions; forming contacts to the source-drain regions; removing the dummy gate and the dummy spacers to form a gate opening; depositing in-situ a passivation layer in the gate opening; forming an oxide layer on the passivation layer; depositing ex-situ a dielectric layer over the oxide layer; and depositing a gate metal over the dielectric layer to form a gate stack in the gate opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for fabricating a gallium arsenide MOSFET device, the method comprising:
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forming a dummy gate over a substrate of gallium arsenide; implanting source-drain extensions adjacent the dummy gate; forming dummy oxide spacers along the sidewalls of the dummy gate and over a portion of the source-drain extensions; defining the source-drain regions adjacent the source-drain extensions; forming alloy contacts to the source-drain regions; removing the dummy gate and removing the dummy oxide spacers to form a gate opening; depositing in-situ a layer of amorphous silicon; forming a silicon dioxide layer on the amorphous silicon layer; depositing ex-situ a layer of hafnium oxide over the silicon dioxide layer; and depositing gate metal over the hafnium oxide layer to form a gate stack. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification