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Fabrication of Self-Aligned Gallium Arsenide Mosfets Using Damascene Gate Methods

  • US 20090011563A1
  • Filed: 09/18/2008
  • Published: 01/08/2009
  • Est. Priority Date: 03/29/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a MOSFET device, the method comprising:

  • forming a dummy gate over a substrate;

    implanting source-drain extensions into the substrate adjacent the dummy gate;

    forming dummy spacers along the sidewalls of the dummy gate and over a portion of the source-drain extensions;

    defining the source-drain regions adjacent the source drain extensions;

    forming contacts to the source-drain regions;

    removing the dummy gate and the dummy spacers to form a gate opening;

    depositing in-situ a passivation layer in the gate opening;

    forming an oxide layer on the passivation layer;

    depositing ex-situ a dielectric layer over the oxide layer; and

    depositing a gate metal over the dielectric layer to form a gate stack in the gate opening.

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