MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20090011608A1
• Filed: 05/07/2008
• Published: 01/08/2009
• Est. Priority Date: 05/15/2007
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: NABATAME, Toshihide
• Application Number:
  US12/116,940
• Publication Number:
  US 20090011608A1
• Time in Patent Office: Days
• US Class Current: 438/761
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.

Claims

1. A manufacturing method of a semiconductor device comprising the steps of:

forming a gate insulating film of a MIS transistor on a semiconductor substrate; and

forming a gate electrode of the MIS transistor on the gate insulating film,

wherein the step of forming the gate insulating film on the semiconductor substrate comprises the steps of;

(a) forming a first layer made of oxide with a relative dielectric constant higher than that of silicon oxide on a main surface of the semiconductor substrate;

(b) after the step (a), heat-treating the main surface of the semiconductor substrate in a non-oxidation atmosphere;

(c) forming, on the first layer, a second layer made of oxide having an oxygen proportion higher than that in the first layer just after the step (b);

(d) forming, on the second layer, a cap layer made of metal suppressing diffusion of oxygen; and

(e) after the step (d), heat-treating the main surface of the semiconductor substrate.

2. The manufacturing method of a semiconductor device according to claim 1,

wherein, in the step (c), a hafnium oxide film forming the second layer is formed on the first layer by ALD using water as an oxygen material.

3. The manufacturing method of a semiconductor device according to claim 1,

wherein, in the step (c), an aluminum oxide film forming the second layer is formed on the first layer by ALD using water as an oxygen material.

4. The manufacturing method of a semiconductor device according to claim 1,

wherein, in the step (c), a tantalum oxide film forming the second layer is formed on the first layer by ALD using water as an oxygen material.

5. The manufacturing method of a semiconductor device according to claim 1, further comprising the step of:

(f) forming the gate electrode made of the cap layer by patterning the cap layer.

6. The manufacturing method of a semiconductor device according to claim 1,

wherein, in the step (b), the first layer is densified.

7. The manufacturing method of a semiconductor device according to claim 1,

wherein, in the step (e), oxygen is supplied from the second layer to the first layer.