SYSTEMS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AND BEVEL EDGE ETCHING

• US 20090014127A1
• Filed: 04/21/2008
• Published: 01/15/2009
• Est. Priority Date: 07/12/2007
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Fodor, Mark A., Werner, Joseph C., DuBois, Dale R., Zhou, Jianhua, Janakiraman, Karthik, Shah, Ashish, Nowak, Thomas, Chan, Chiu, Balasubramanian, Ganesh, Sivaramakrishnan, Visweswaren, Al-Bayati, Amir, Ayoub, Mohamad, Kim, Eui Kyoon
• Granted Patent: US 8,197,636 B2
• Time in Patent Office: Days
• US Class Current: 156/345.290
• CPC Class Codes: H01J 2237/3321 CVD [Chemical Vapor Deposition]
• CPC Class Codes: H01J 37/32366 Localised processing
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

Claims

1. An apparatus for processing multiple substrates, comprising:

a loadlock chamber;

a transfer chamber coupled to the loadlock chamber; and

one or more twin process chambers coupled to the transfer chamber, wherein each twin process chamber defines a plurality of separate processing regions, and each processing region comprises;

a substrate support having a substrate support surface;

a plasma generator configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface; and

a gas delivery assembly coupled to a gas source, wherein the gas delivery assembly is configured to generate a radial gas flow over the substrate support surface, wherein the radial gas flow travels from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

2. The apparatus of claim 1, wherein the plasma generator comprises:

a first electrode; and

a second electrode spaced apart from the first electrode, wherein a distance between the first and second electrode varies at different locations.

3. The apparatus of claim 2, wherein the gas delivery assembly is further coupled to an etching gas source for delivering an etching gas to the plasma generator.

4. The apparatus of claim 2, wherein the first electrode is coupled to a radio-frequency power bias, and the second electrode is coupled to a potential bias one of a ground potential, a DC potential or an AC potential.

5. The apparatus of claim 2, wherein at least the first electrode includes a slant portion.

6. The apparatus of claim 2, wherein the second electrode comprises a portion of the gas delivery assembly.

7. The apparatus of claim 2, wherein the second electrode comprises the substrate support.

8. The apparatus of claim 2, wherein the plasma generator is arranged outside the gas delivery assembly.

9. The apparatus of claim 1, wherein the gas delivery assembly comprises a gas distribution plate configured to evenly distribute a processing gas across the substrate support.

10. The apparatus of claim 1, wherein the gas source is further configured to supply a process gas through the gas delivery assembly for forming a deposition film on a substrate disposed in each processing region.

11. An apparatus for processing multiple substrates, comprising:

a loadlock chamber;

a transfer chamber coupled to the loadlock chamber;

one or more twin process chambers adapted for implementing deposition processes, wherein the one or more twin process chambers are coupled to the transfer chamber; and

a substrate edge processing chamber coupled to the transfer chamber, the substrate edge processing chamber comprising;

a substrate support having a substrate support surface;

a plasma generator configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface; and

a gas delivery assembly coupled to a gas source, wherein the gas delivery assembly is configured to generate a radial gas flow over the substrate support surface, wherein the radial gas flow travels from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

12. The apparatus of claim 11, wherein the plasma generator comprises:

a first electrode; and

a second electrode spaced apart from the first electrode, wherein distance between the first and second electrode various at different locations.

13. The apparatus of claim 12, wherein the gas delivery assembly is further coupled to an etching gas source for delivering an etching gas to the plasma generator.

14. The apparatus of claim 12, wherein the first electrode is coupled to a radio-frequency power bias, and the second electrode is coupled to a potential bias one of a ground potential, a DC potential or an AC potential.

15. The apparatus of claim 12, wherein at least the first electrode includes a slant portion.

16. The apparatus of claim 12, wherein the second electrode comprises a portion of the gas delivery assembly.

17. The apparatus of claim 12, wherein the second electrode comprises the substrate support.

18. The apparatus of claim 12, wherein the plasma generator is arranged outside the gas delivery assembly.

19. The apparatus of claim 11, wherein the gas delivery assembly comprises a gas distribution plate configured to evenly distribute a processing gas across the substrate support.

20. The apparatus of claim 11, wherein the substrate edge processing chamber is arranged between the transfer chamber and a factory interface.