SEMICONDUCTOR DEVICE

• US 20090014728A1
• Filed: 12/13/2007
• Published: 01/15/2009
• Est. Priority Date: 07/11/2007
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Kamo, Yoshitaka, Koyama, Hidetoshi
• Granted Patent: US 8,008,667 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout

Abstract

A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.

Claims

1. A semiconductor device comprising:

a first semiconductor layer;

a first semiconductor element located in said first semiconductor layer;

a second semiconductor layer of a transparent semiconductor material disposed on said first semiconductor layer and covering said first semiconductor element;

a second semiconductor element located in said second semiconductor layer; and

a wire extending within said second semiconductor layer and electrically connecting said first and second semiconductor elements.

2. The semiconductor device according to claim 1, wherein said first semiconductor layer is a semiconductor substrate of a transparent semiconductor material.

3. The semiconductor device according to claim 1, wherein said second semiconductor layer is a semiconductor material having a bandgap energy of at least 2.5 eV.

4. The semiconductor device according to claim 2, wherein said second semiconductor layer is a semiconductor material having a bandgap energy of at least 2.5 eV.

5. The semiconductor device according to claim 1, wherein said second semiconductor layer is a crystalline layer of said transparent semiconductor material grown on said first semiconductor layer.

6. The semiconductor device according to claim 2, wherein said second semiconductor layer is a crystalline layer of said transparent semiconductor material grown on said first semiconductor layer.

7. The semiconductor device according to claim 3, wherein said second semiconductor layer is a crystalline layer of said transparent semiconductor material grown on said first semiconductor layer.

8. The semiconductor device according to claim 4, wherein said second semiconductor layer is a crystalline layer of said transparent semiconductor material grown on said first semiconductor layer.

9. The semiconductor device according to claim 5, wherein:

said first semiconductor layer is a single crystal layer having a lattice constant; and

said second semiconductor layer has a lattice constant close enough to the lattice constant of said first semiconductor layer so said second semiconductor layer may be epitaxially grown on said first semiconductor layer.

10. The semiconductor device according to claim 6, wherein:

said first semiconductor layer is a single crystal layer having a lattice constant; and

said second semiconductor layer has a lattice constant close enough to the lattice constant of said first semiconductor layer so said second semiconductor layer may be epitaxially grown on said first semiconductor layer.

11. The semiconductor device according to claim 7, wherein:

said first semiconductor layer is a single crystal layer having a lattice constant; and

said second semiconductor layer has a lattice constant close enough to the lattice constant of said first semiconductor layer so said second semiconductor layer may be epitaxially grown on said first semiconductor layer.

12. The semiconductor device according to claim 8, wherein:

said first semiconductor layer is a single crystal layer having a lattice constant; and

said second semiconductor layer has a lattice constant close enough to the lattice constant of said first semiconductor layer so said second semiconductor layer may be epitaxially grown on said first semiconductor layer.

13. The semiconductor device according to claim 1, wherein:

said first semiconductor layer is a material selected from the group consisting of SiC, GaN, and ZnO; and

said second semiconductor layer is a material selected from the group consisting of SiC, GaN, and ZnO.