METHOD OF MAKING A LIGHT-EMITTING DIODE
First Claim
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1. A light-emitting diode (LED) device comprising:
- an n-doped layer;
an active layer for emitting light adjacent the n-doped layer;
a p-doped layer adjacent the active layer;
a metal substrate adjacent the p-doped layer;
a plurality of balls disposed above a surface of the n-doped layer; and
an optically transparent and electrically conductive contact layer disposed above the plurality of balls.
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Abstract
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
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Citations
20 Claims
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1. A light-emitting diode (LED) device comprising:
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an n-doped layer; an active layer for emitting light adjacent the n-doped layer; a p-doped layer adjacent the active layer; a metal substrate adjacent the p-doped layer; a plurality of balls disposed above a surface of the n-doped layer; and an optically transparent and electrically conductive contact layer disposed above the plurality of balls. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A vertical light-emitting diode (VLED) device comprising:
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an active layer between an n-doped layer and a p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride (GaN); a metal substrate adjacent the p-doped layer; a plurality of balls for light extraction disposed above a surface of the n-doped layer; and an optically transparent and electrically conductive contact layer disposed above the plurality of balls. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A light-emitting diode (LED) device comprising:
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an n-doped layer, wherein a surface of the n-doped layer is roughened; an active layer for emitting light adjacent the n-doped layer; a p-doped layer adjacent the active layer, wherein the n-doped layer is at least about four times thicker than the p-doped layer and wherein both the n-doped layer and the p-doped layer include gallium nitride (GaN); a metal substrate adjacent the p-doped layer; a plurality of balls disposed above the roughened surface of the n-doped layer; and an optically transparent and electrically conductive contact layer disposed above the plurality of balls.
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Specification