BACK-ILLUMINATED TYPE SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA MODULE USING THE SAME

• US 20090014762A1
• Filed: 07/02/2008
• Published: 01/15/2009
• Est. Priority Date: 07/06/2007
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MATSUO, Mie, Kohyama, Yusuke
• Granted Patent: US 7,859,073 B2
• Time in Patent Office: Days
• US Class Current: 257/292
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12043 Photo diode
• CPC Class Codes: H04N 23/57 Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

Abstract

The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section. An interconnect layer driving the field-effect transistor in the image pickup pixel section is formed on a first surface side of the semiconductor substrate. A light receiving surface of the photoelectric conversion element is located on a second surface side of the semiconductor substrate. The solid-state image pickup device includes a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.

Claims

1. A solid-state image pickup device comprising:

an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section, an interconnect layer driving the field-effect transistor in the image pickup pixel section being formed on a first surface side of the semiconductor substrate, a light receiving surface of the photoelectric conversion element being located on a second surface side of the semiconductor substrate;

a first terminal exposed from the second surface side of the semiconductor substrate; and

a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.

2. The solid-state image pickup device according to claim 1, wherein the first terminal is a part of a pad formed on the first surface side of the semiconductor substrate which part is exposed in an opening on the second surface side.

3. The solid-state image pickup device according to claim 2, wherein the second terminal is a bump formed on the pad on the first surface side of the semiconductor substrate.

4. The solid-state image pickup device according to claim 1, wherein the peripheral circuit section includes a driving circuit configured to select and drive the image pickup pixel section, a signal processing circuit configured to execute signal processing on a pixel signal output by the image pickup pixel section, and a data holding circuit configured to hold data obtained from the signal processing circuit.

5. The solid-state image pickup device according to claim 4, wherein the interconnect layer driving the field-effect transistor includes an interconnect layer which transfers at least one of an address pulse, a reset pulse, and a read pulse which are supplied to the image pickup pixel section by the driving circuit.

6. The solid-state image pickup device according to claim 1, wherein the peripheral circuit section is subjected to a function test from the first surface side of the semiconductor substrate, and the image pickup pixel section is subjected to an image test using the first terminal with the light receiving surface irradiated with reference light.

7. A solid-state image pickup device comprising:

an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section, an interconnect layer driving the field-effect transistor in the image pickup pixel section being formed on a first surface side of the semiconductor substrate, a light receiving surface of the photoelectric conversion element being located on a second surface side of the semiconductor substrate; and

a pad electrode located on the first surface side of the semiconductor substrate and exposed from the second surface side of the semiconductor substrate,

wherein a pad opening is formed on the pad electrode on the first surface side of the semiconductor substrate.

8. The solid-state image pickup device according to claim 7, wherein the peripheral circuit section includes a driving circuit configured to select and drive the image pickup pixel section, a signal processing circuit configured to execute signal processing on a pixel signal output by the image pickup pixel section, and a data holding circuit configured to hold data obtained from the signal processing circuit.

9. The solid-state image pickup device according to claim 8, wherein the interconnect layer driving the field-effect transistor includes an interconnect layer which transfers at least one of an address pulse, a reset pulse, and a read pulse which are supplied to the image pickup pixel section by the driving circuit.

10. The solid-state image pickup device according to claim 7, wherein the peripheral circuit section is subjected to a function test from the first surface side via the pad opening using the pad electrode, and the image pickup pixel section is subjected to an image test using a part of the pad electrode which is exposed from the semiconductor substrate, with the light receiving surface irradiated with reference light.

11. A camera module comprising:

a solid-state image pickup device comprising an image pickup pixel section in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section, an interconnect layer driving the field-effect transistor in the image pickup pixel section being formed on a first surface side of a semiconductor substrate, a light receiving surface of the photoelectric conversion element being located on a second surface side of the semiconductor substrate, the solid-state image pickup device further comprising a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal formed on the first surface side of the semiconductor substrate and electrically connected to the first terminal and the interconnect layer;

a lens which condenses incident light on the light receiving surface of the photoelectric conversion element;

a member having the first surface side of the semiconductor substrate mounted on one surface of the member and an external connection terminal provided on the other surface of the member; and

an interconnect formed on the member so as to extend from the one surface side on which the semiconductor substrate is mounted to the other surface side, the interconnect being electrically connected to the external connection terminal.

12. The camera module according to claim 11, wherein the first terminal is a part of a pad formed on the first surface side of the semiconductor substrate which part is exposed in an opening on the second surface side.

13. The camera module according to claim 12, wherein the second terminal is a bump formed on the pad on the first surface side of the semiconductor substrate.

14. The camera module according to claim 11, wherein the peripheral circuit section includes a driving circuit configured to select and drive the image pickup pixel section, a signal processing circuit configured to execute signal processing on a pixel signal output by the image pickup pixel section, and a data holding circuit configured to hold data obtained from the signal processing circuit.

15. The camera module according to claim 14, wherein the interconnect layer driving the field-effect transistor includes an interconnect layer which transfers at least one of an address pulse, a reset pulse, and a read pulse which are supplied to the image pickup pixel section by the driving circuit.

16. The camera module according to claim 11, wherein the peripheral circuit section is subjected to a function test from the first surface side of the semiconductor substrate, and the image pickup pixel section is subjected to an image test using the first terminal with the light receiving surface irradiated with reference light.

17. The camera module according to claim 11, further comprising a passive element chip mounted on the first surface side of the semiconductor substrate.

18. The camera module according to claim 17, wherein the member is a pressed resin layer which covers a periphery of the semiconductor substrate and the passive element chip.

19. The camera module according to claim 11, wherein the member is a mounting substrate, the interconnect is formed on the mounting substrate, the solid-state image pickup device is mounted on the mounting substrate, and the first terminal and the interconnect are connected together by wire-bonding.

20. The camera module according to claim 19, further comprising a passive element chip mounted on the mounting substrate in proximity to the solid-state image pickup device.