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SEMICONDUCTOR DEVICE

  • US 20090014770A1
  • Filed: 07/09/2008
  • Published: 01/15/2009
  • Est. Priority Date: 07/12/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first electrode formed on a semiconductor substrate;

    a second electrode formed on the semiconductor substrate so as to face the first electrode; and

    a laminated film formed between the first and second electrodes and consisting of at least two stacked solid electrolytic layers of which components differ from each other,wherein the first electrode includes a metal to be diffused in the solid electrolytic layer so as to form a low resistance conductive path therein; and

    wherein the solid electrolytic laminated film is formed so that the mobility of the solid electrolytic layer closer to the first electrode with respect to the metal becomes higher than that of the solid electrolytic layer closer to the second electrode with respect to the metal.

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