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DYNAMIC RANDOM ACCESS MEMORY WITH AN ELECTROSTATIC DISCHARGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

  • US 20090014886A1
  • Filed: 12/05/2007
  • Published: 01/15/2009
  • Est. Priority Date: 07/11/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing an electrostatic discharge structure, comprising the steps of:

  • providing a substrate having an electrostatic discharge region, wherein the electrostatic discharge region has a plurality of conductive structures;

    forming an interlayer dielectric layer on top of the substrate;

    forming a contact hole in the interlayer dielectric layer to exposes part of the substrate, wherein the contact hole is formed between each two of the conductive structures; and

    forming a conductor in the contact hole and on the top surface of the interlayer dielectric layer, wherein the conductor electrically connects to the substrate.

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