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Magnetoresistive Magnetic Field Sensor Structure

  • US 20090015252A1
  • Filed: 07/10/2008
  • Published: 01/15/2009
  • Est. Priority Date: 07/13/2007
  • Status: Active Grant
First Claim
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1. A magnetic field sensor structure comprisinga first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction;

  • anda second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction,wherein the first and second magnetoresistive elements are arranged in a layer stack vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

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