INTEGRATED CIRCUIT WITH ELECTROMAGNETIC INTRACHIP COMMUNICATION AND METHODS FOR USE THEREWITH

• US 20090015353A1
• Filed: 09/15/2008
• Published: 01/15/2009
• Est. Priority Date: 06/21/2006
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Rofougaran, Ahmadreza (Reza)
• Granted Patent: US 8,338,930 B2
• Time in Patent Office: Days
• US Class Current: 333/24.C
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07786 the antenna being of the HF type, such as a dipole
• CPC Class Codes: G06K 7/10237 the reader and the record carrier being capable of selectively switching between reader and record carrier appearance, e.g. in near field communication [NFC] devices where the NFC device may function as an RFID reader or as an RFID tag
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/1903 : including wave guides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01Q 1/2225 : used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/065 : Microstrip dipole antennas patch antenna H01Q9/0407

Abstract

An integrated circuit includes a substrate and a first integrated circuit die having a first circuit coupled to the substrate via a first bonding wire, the first circuit having a first intra-chip interface. A second integrated circuit die has a second circuit coupled to the substrate via a second bonding wire, the second circuit having a second intra-chip interface, the second bonding wire electrically isolated from the first bonding wire. The first circuit communicates with the second circuit via the first intra-chip interface and the second intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a first electromagnetic coupling between the first bonding wire and the second bonding wire.

Claims

1. An integrated circuit comprising:

a substrate;

a first integrated circuit die having a first circuit coupled to the substrate via a first bonding wire, the first circuit having a first intra-chip interface; and

a second integrated circuit die having a second circuit coupled to the substrate via a second bonding wire, the second circuit having a second intra-chip interface, the second bonding wire electrically isolated from the first bonding wire;

wherein the first circuit communicates with the second circuit via the first intra-chip interface and the second intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a first electromagnetic coupling between the first bonding wire and the second bonding wire.

2. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes an inductive coupling between the first bonding wire and the second bonding wire.

3. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes a capacitive coupling between the first bonding wire and the second bonding wire.

4. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire.

5. The integrated circuit of claim 1 wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via an RF millimeter wave coupling between the first bonding wire and the second bonding wire;

and

wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via a capacitive coupling between the first bonding wire and the second bonding wire.

6. The integrated circuit of claim 5 wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

7. The integrated circuit of claim 1 wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via an inductive coupling between the first bonding wire and the second bonding wire;

and

wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via a capacitive coupling between the first bonding wire and the second bonding wire.

8. The integrated circuit of claim 7 wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

9. The integrated circuit of claim 1 wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via an inductive coupling between the first bonding wire and the second bonding wire;

and

wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via an RF millimeter wave coupling between the first bonding wire and the second bonding wire.

10. The integrated circuit of claim 9 wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

11. The integrated circuit of claim 1 wherein the substrate includes a first substrate bonding pad and a second substrate bonding pad;

wherein the first circuit includes a first circuit bonding pad;

wherein the second circuit includes a second circuit bonding pad;

wherein the first bonding wire connects the first substrate bonding pad to the first circuit bonding pad; and

wherein the second bonding wire connects the second substrate bonding pad to the second circuit bonding pad.

12. The integrated circuit of claim 1 wherein the first integrated circuit die is stacked on the second integrated circuit die.

13. The integrated circuit of claim 1 wherein the first circuit is further coupled to the substrate via a third bonding wire, and wherein the first circuit includes a third intra-chip interface;

and

wherein the second circuit is further coupled to the substrate via a fourth bonding wire, and wherein the second circuit includes a fourth intra-chip interface, the fourth bonding wire electrically isolated from the third bonding wire;

wherein the first circuit further communicates with the second circuit via the third intra-chip interface and the fourth intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a second electromagnetic coupling between the third bonding wire and the fourth bonding wire.

14. The integrated circuit of claim 13 wherein the first electromagnetic coupling is via one of:

an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling;

wherein the second electromagnetic coupling is via one of;

an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling; and

wherein the first electromagnetic coupling differs from the second electromagnetic coupling.

22. The method of claim 11 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

15. An method comprising:

interfacing a first circuit of a first integrated circuit die to a second circuit of a second integrated circuit via a first electromagnetic coupling between a first bonding wire that couples the first circuit to the substrate and a second bonding wire that couples the second circuit to the substrate;

wherein the second bonding wire is electrically isolated from the first bonding wire.

16. The method of claim 15 wherein the first electromagnetic coupling includes an inductive coupling between the first bonding wire and the second bonding wire.

17. The method of claim 15 wherein the first electromagnetic coupling includes a capacitive coupling between the first bonding wire and the second bonding wire.

18. The method of claim 15 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire.

19. The method of claim 15 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire;

and

wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.

20. The method of claim 19 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

21. The method of claim 15 wherein the interfacing includes, in a first mode of operation, communicating via an RF millimeter wave coupling between the first bonding wire and the second bonding wire;

and

wherein the interfacing includes, in a second mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire.

23. The method of claim 15 wherein the interfacing includes, in a first mode of operation, communicating via an inductive coupling between the first bonding wire and the second bonding wire;

and

wherein the interfacing includes, in a second mode of operation, communicating via a capacitive coupling between the first bonding wire and the second bonding wire.

24. The method of claim 23 wherein the interfacing includes initiating a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selecting one of:

the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.

25. The method of claim 15 wherein the first circuit is further coupled to the substrate via a third bonding wire, wherein the second circuit is further coupled to the substrate via a fourth bonding wire, wherein the fourth bonding wire is electrically isolated from the third bonding wire;

and wherein interfacing further includes;

communicating via a second electromagnetic coupling between the third bonding wire and the fourth bonding wire.

26. The method of claim 25 wherein the first electromagnetic coupling is via one of:

an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling;

wherein the second electromagnetic coupling is via one of;

an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling; and

wherein the first electromagnetic coupling differs from the second electromagnetic coupling.