NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME
First Claim
1. A nitride-based semiconductor light emitting device, comprising:
- a substrate;
a nitride-based multi-layered structure epitaxially formed on the substrate, the multi-layered structure including a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written, the second-type layer and the active layer cooperatively forming a developed mesa structure, the first-type layer having an exposed portion, the mesa structure having a top surface facing away from the substrate and a plurality of side surfaces adjoining the top surface, wherein a crystal growth orientation of the multi-layered structure intersects with <
0001>
crystal orientation thereof, and the top surface and the side surfaces are roughened surfaces;
a first-type electrode formed on the exposed portion and brought into ohmic contact with the first-type layer; and
a second-type electrode formed on the top surface and brought into ohmic contacted with the second-type layer.
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Abstract
An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode. The multi-layered structure includes a first-type layer, an active layer, and a second-type layer. The multi-layered structure has a developed mesa structure which at least includes the second-type layer and the active layer and whereby the first-type layer is partially exposed to form an exposed portion. The mesa structure has a roughened top surface and a plurality of roughened side surfaces adjoining the top surface. A crystal growth orientation of the multi-layered structure intersects with <0001 > crystal orientation thereof. The first-type electrode and the second-type electrode respectively come into ohmic contact with the first-type layer and the second-type layer.
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Citations
18 Claims
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1. A nitride-based semiconductor light emitting device, comprising:
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a substrate; a nitride-based multi-layered structure epitaxially formed on the substrate, the multi-layered structure including a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written, the second-type layer and the active layer cooperatively forming a developed mesa structure, the first-type layer having an exposed portion, the mesa structure having a top surface facing away from the substrate and a plurality of side surfaces adjoining the top surface, wherein a crystal growth orientation of the multi-layered structure intersects with <
0001>
crystal orientation thereof, and the top surface and the side surfaces are roughened surfaces;a first-type electrode formed on the exposed portion and brought into ohmic contact with the first-type layer; and a second-type electrode formed on the top surface and brought into ohmic contacted with the second-type layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a nitride-based semiconductor light emitting device, comprising:
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providing a substrate; epitaxially growing a nitride-based multi-layered structure on the substrate, the multi-layered structure comprising a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written, wherein a crystal growth orientation of the multi-layered structure intersects with <
0001>
crystal orientation thereof;patterning the multi-layered structure to form a mesa structure thereon and whereby the first-type layer is partially exposed to form an exposed portion, the mesa structure having a top surface facing away from the substrate and a plurality of side surfaces adjoining the top surface; forming a first-type electrode and a second-type electrode respectively on the exposed portion and the top surface, so as to respectively come into ohmic contact with first-type layer and the second-type layer; and wet etching the patterned multi-layered structure so as to roughen the top surface and the side surfaces of the mesa structure. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for fabricating a nitride-based semiconductor light emitting device, comprising:
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providing a single crystal substrate having a crystal face, wherein the crystal face is one of a non-polar face and a semi-polar face; epitaxially growing a nitride-based multi-layered structure on the crystal face, wherein a crystal growth orientation of the multi-layered structure matches with an crystal orientation of the crystal face; treating the multi-layered structure to form a mesa structure thereon; forming a plurality of electrodes on the patterned multi-layered structure and electrically therewith; and wet etching the patterned multi-layered structure to roughen the mesa structure. - View Dependent Claims (17, 18)
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Specification