Method of Forming Power Device Utilizing Chemical Mechanical Planarization
6 Assignments
0 Petitions
Accused Products
Abstract
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.
74 Citations
58 Claims
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1-51. -51. (canceled)
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52. A field effect transistor comprising:
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a plurality of active gate trenches in a silicon region, each active gate trench including a recessed gate electrode; a gate runner trench in the silicon region, the gate runner trench being contiguous with the plurality of active gate trenches, the gate runner trench including a recessed gate runner, the recessed gate runner being contiguous with and thus in electrical contact with the recessed gate electrodes, wherein the gate runner trench has a width greater than a width of each of the plurality of active gate trenches. - View Dependent Claims (53, 54, 55, 56, 57)
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58-106. -106. (canceled)
Specification