MULTI-BAND, INDUCTOR RE-USE LOW NOISE AMPLIFIER

• US 20090021307A1
• Filed: 04/22/2008
• Published: 01/22/2009
• Est. Priority Date: 04/30/2007
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Jahanian, Amin, Tzeng, Fred, Heydari, Payam
• Granted Patent: US 7,622,989 B2
• Time in Patent Office: Days
• US Class Current: 330/277
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

Described herein are multi-band LNAs that reuse inductors for different frequency bands to minimize chip area. In an embodiment, a multi-band LNA is capable of operating in a narrowband (NB) and a wideband (WB) while reusing at least one input impedance matching inductor and at least one load inductor for both bands. The reuse of inductors results in a more efficient use of chip area. In an exemplary embodiment, the LNA comprises a common source transistor and a common gate transistor. In this embodiment, the LNA operates in a common source configuration using the common source transistor to amplify input signals in the NB, and operates in a common gate configuration using the common gate transistor to amplify input signals in the WB. The LNA reuses an input impedance matching inductor and a load inductor in both configurations, and thus both bands.

Claims

1. A low noise amplifier (LNA), comprising:

a common source transistor configured to amplify an input signal having a frequency in a narrowband (NB);

a common gate transistor configured to amplify an input signal having a frequency in a wideband (WB); and

an impedance matching network coupled to the common source transistor and the common gate transistor, wherein the impedance matching network is configured to reuse at least one inductor to provide input impedance matching for the common source transistor in the NB and the common gate transistor in the WB.

2. The LNA of claim 1, wherein the impedance matching network comprises a plurality of inductors and a capacitor coupled in a tapped-inductor configuration.

3. The LNA of claim 1, wherein the impedance matching network comprises a plurality of capacitors and an inductor coupled in a tapped-capacitor configuration.

4. The LNA of claim 1, wherein the wideband spans a frequency range of at least 0.5 Gigahertz.

5. The LNA of claim 4, wherein the narrowband is centered at a frequency of approximately 2.4 Gigahertz.

6. The LNA of claim 4, wherein the wideband is separated from the narrowband by at least one Gigahertz.

7. The LNA of claim 6, wherein the wideband is separated from the narrowband by at least two Gigahertz.

8. The LNA of claim 1, wherein the input impedance matching network is configured to provide impedance matching for a source resistance of approximately 50 Ω

.

9. The LNA of claim 1, wherein the input impedance matching network is coupled to a source of the common source transistor and a source of the common gate transistor.

10. The LNA of claim 1, further comprising a load network coupled to the common source transistor and the common gate transistor, wherein the load network is configured to reuse a load inductor to resonant at a frequency in the narrowband and a frequency in the wideband.

11. The LNA of claim 10, further comprising a switched capacitor network coupled to the load network for tuning the resonant frequency of the load network within the wideband.

12. The LNA of claim 11, wherein the switched capacitor network comprises at least one capacitor and at least one switch transistor coupled to the capacitor.

13. The LNA of claim 12, wherein the switched capacitor network is configured to tune the load network to at least two different resonant frequencies within the wideband by switching the at least one switch transistor between an on state and an off state.

14. The LNA of claim 10, wherein the load network comprises a first load inductor and a second load inductor, and the common gate transistor is coupled between the first and second load inductors.

15. A low noise amplifier (LNA), comprising:

a common source transistor adapted to amplify an input signal having a frequency in a narrowband (NB);

a common gate transistor adapted to amplify an input signal having a frequency in a wideband (WB); and

a load network coupled to the common source transistor and the common gate transistor, wherein the load network is configured to reuse a load inductor to resonant at a frequency in the NB and a frequency in the WB.

16. The LNA of claim 15, wherein the wideband spans a frequency range of at least 0.5 Gigahertz.

17. The LNA of claim 16, wherein the narrowband is centered at a frequency of approximately 2.4 Gigahertz.

18. The LNA of claim 16, wherein the wideband is separated from the narrowband by at least one Gigahertz.

19. The LNA of claim 18, wherein the wideband is separated from the narrowband by at least two Gigahertz.

20. The LNA of claim 15, further comprising a switched capacitor network coupled to the load network for tuning the resonant frequency of the load network within the wideband.

21. The LNA of claim 20, wherein the switched capacitor network comprises at least one capacitor and at least one switch transistor coupled to the capacitor.

22. The LNA of claim 21, wherein the switched capacitor network is configured to tune the load network to at least two different resonant frequencies within the wideband by switching the at least one switch transistor between an on state and an off state.

23. The LNA of claim 15, wherein the load network comprises a first load inductor and a second load inductor, and the common gate transistor is coupled between the first and second load inductors.