LIGHT EMITTING DEVICE PROCESSES

• US 20090023239A1
• Filed: 09/24/2008
• Published: 01/22/2009
• Est. Priority Date: 07/22/2004
• Status: Abandoned Application

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Weig, Matthew, Minsky, Milan Singh, Lim, Michael, Erchak, Alexei A., Graff, John W., Duncan, Scott W.
• Application Number:
  US12/236,779
• Publication Number:
  US 20090023239A1
• Time in Patent Office: Days
• US Class Current: 438/34
• CPC Class Codes: G03B 21/204 using secondary light emission, e.g. luminescence or fluorescence using different colours G03B33/00; if related to video signals H04N9/3197
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H04N 9/315 Modulator illumination systems general applications of lighting devices F21V; general optical systems G02B; lamp houses for projectors not peculiar to the presence of an electronic spatial light modulator G03B21/20

Abstract

Light-emitting devices, and related components, processes, systems and methods are disclosed.

Claims

1. A method of forming light emitting devices comprising:

providing a submount supporting a plurality of multi-layer stacks comprising a sacrificial layer and a light-generating region, the light-generating region between a p-type layer and a n-type layer, wherein the multi-layer stacks have substrate portions disposed thereover;

at least partially decomposing the sacrificial layer of the multi-layer stacks on an individual basis;

separating the multi-layer stacks from the substrate portions to expose surfaces of the multi-layer stacks, wherein the n-type layers of the multi-layer stacks are closer to the exposed surfaces than the p-type layers; and

forming light emitting devices from the multi-layer stacks.

2. The method of claim 1, wherein at least partially decomposing the sacrificial layer includes exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation.

3. The method of claim 1, wherein the n-type layers of the light emitting devices are closer to an emission surface through which a majority of the light emitted than the p-type layers.

4. The method of claim 3, wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light emitting devices is emitted through the emission surface.

5. The method of claim 1, wherein the light emitting devices have a side of between 0.5 mm and 1 cm.

6. The method of claim 1, comprising simultaneously decomposing the sacrificial layer of more than one of the multi-layer stacks on an individual basis.

7. The method of claim 1, comprising sequentially decomposing the sacrificial layer of the multi-layer stacks on an individual basis.

8. The method of claim 1, further comprising disposing a phosphor material layer over the exposed surfaces.

9. The method of claim 7, wherein the phosphor material layer is compressed.

10. The method of claim 7, wherein the phosphor material layer has a thickness uniformity of less than about 20%.

11. The method of claim 1, wherein the sacrificial layer comprises a semiconductor material.

12. The method of claim 1, wherein the exposed surfaces are surfaces of the n-type layers.

13. The method of claim 1, wherein the substrate comprises sapphire.

14. The method of claim 1, wherein the submount comprises copper.

15. The method of claim 14, wherein the submount comprises tungsten.