CLEAN RATE IMPROVEMENT BY PRESSURE CONTROLLED REMOTE PLASMA SOURCE

• US 20090023241A1
• Filed: 07/16/2008
• Published: 01/22/2009
• Est. Priority Date: 07/17/2007
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hashimoto, Takao, Furuta, Gaku, Li, Liwei, Choi, Soo Young
• Application Number:
  US12/174,408
• Publication Number:
  US 20090023241A1
• Time in Patent Office: Days
• US Class Current: 438/57
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases

Abstract

The present invention generally comprises a method for cleaning a large area substrate processing chamber. As chamber volume increases, it has surprisingly been found that simply scaling up the cleaning conditions may not effectively clean silicon from the exposed chamber surfaces. Undesired silicon deposits on exposed chamber surfaces may lead to contamination in solar panel formation. Increasing the pressure of the chamber to about 10 Torr or greater while maintaining the chamber at a temperature between about 150 degrees Celsius and 250 degrees Celsius increases plasma cleaning effectiveness such that silicon deposits are removed from the chamber. The combination of high pressure and low temperature may reduce substrate contamination without sacrificing substrate throughput in solar panel fabrication.

Claims

1. A chamber cleaning method, comprising:

flowing a cleaning gas into a remote plasma source;

igniting a plasma in the remote plasma source;

introducing the plasma to a processing chamber sized to receive a substrate having a surface area of about 50,000 square centimeters or greater, the chamber maintained at a pressure of about 10 Torr and above; and

cleaning the chamber with the plasma.

2. The method of claim 1, wherein the cleaning gas comprises NF₃.

3. The method of claim 2, wherein the cleaning gas comprises N₂O.

4. The method of claim 3, wherein a ratio of the flow of NF₃ to N₂O is between about 4:

1 to about 1;

1.

5. The method of claim 1, wherein the cleaning gas comprises at least one gas selected from the group consisting of NF₃, F₂, SF₆, and combinations thereof.

6. The method of claim 1, wherein the temperature of the chamber is between about 175 degrees Celsius and about 225 degrees Celsius during the cleaning.

7. The method of claim 1, wherein the pressure is between about 10 Torr and about 15 Torr.

8. A solar cell manufacturing method, comprising:

depositing a first silicon film over a first substrate in a first chamber, the substrate having a surface area of about 50,000 square centimeters or greater;

removing the first substrate from the first chamber;

cleaning the first chamber, the cleaning comprising plasma cleaning the first chamber with a cleaning gas at a pressure of about 10 Torr and above;

introducing a second substrate to the first chamber; and

depositing a second silicon film over the second substrate.

9. The method of claim 8, wherein the solar cell comprises a single junction solar cell.

10. The method of claim 8, wherein the solar cell comprises a tandem junction solar cell.

11. The method of claim 8, wherein the cleaning gas comprises NF₃.

12. The method of claim 11, wherein the cleaning gas comprises N₂O.

13. The method of claim 12, wherein a ratio of the flow of NF₃ to N₂O is between about 4:

1 to about 1;

1.

14. The method of claim 8, wherein the cleaning gas comprises at least one gas selected from the group consisting of NF₃, F₂, SF₆, and combinations thereof.

15. The method of claim 8, wherein the temperature of the chamber is between about 175 degrees Celsius and about 225 degrees Celsius during the cleaning.

16. The method of claim 8, wherein the pressure is between about 10 Torr and about 15 Torr.

17. A silicon deposition chamber cleaning method, comprising:

introducing a cleaning gas plasma to the chamber, the chamber having a substrate receiving surface adapted to receive a substrate having an area of about 50,000 cm² or greater and maintained at a pressure of about 10 Torr or greater, the plasma comprising fluorine radicals; and

reacting the fluorine radicals with silicon deposited on the chamber to remove the silicon.

18. The method of claim 17, wherein the chamber has a substrate receiving surface adapted to receive a substrate having an area of about 60,000 cm² or greater.

19. The method of claim 17, wherein the temperature of the chamber is between about 175 degrees Celsius and about 225 degrees Celsius during the reacting.

20. The method of claim 17, wherein the pressure is between about 10 Torr and about 15 Torr.