Semiconductor Light Emitting Device and Method for Manufacturing the Same
First Claim
1. A semiconductor light emitting device comprising:
- a substrate;
a semiconductor lamination portion made of nitride semiconductor which is provided on one surface of the substrate, and formed by laminating an n-type layer and a p-type layer so as to form a light emitting layer;
a light transmitting conductive layer provided at a surface side of the semiconductor lamination portion;
a first electrode provided on the light transmitting conductive layer so as to be electrically connected to a conductivity type layer of the surface side of the semiconductor lamination portion; and
a second electrode provided so as to be electrically connected to a conductivity type layer of a lower layer side of the semiconductor lamination portion,wherein a plurality of concaves are formed so as to leave a part of the light transmitting conductive layer on a bottom surface of each of the concaves, thereby a concave-convex pattern is formed on the surface of the light transmitting conductive layer.
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Accused Products
Abstract
Concaves and convexes are formed in a light transmitting conductive layer provided on a surface of a light emitting device made of nitride semiconductor, thereby light emitted from a light emitting layer is totally reflected repeatedly in a semiconductor lamination portion and a substrate and can be effectively taken out without attenuation, and external quantum efficiency can be improved. A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion.
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Citations
12 Claims
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1. A semiconductor light emitting device comprising:
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a substrate; a semiconductor lamination portion made of nitride semiconductor which is provided on one surface of the substrate, and formed by laminating an n-type layer and a p-type layer so as to form a light emitting layer; a light transmitting conductive layer provided at a surface side of the semiconductor lamination portion; a first electrode provided on the light transmitting conductive layer so as to be electrically connected to a conductivity type layer of the surface side of the semiconductor lamination portion; and a second electrode provided so as to be electrically connected to a conductivity type layer of a lower layer side of the semiconductor lamination portion, wherein a plurality of concaves are formed so as to leave a part of the light transmitting conductive layer on a bottom surface of each of the concaves, thereby a concave-convex pattern is formed on the surface of the light transmitting conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 9, 10, 11, 12)
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7. A method for manufacturing a semiconductor light emitting device comprising the steps of:
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(a) forming a semiconductor lamination portion on a substrate by laminating an n-type layer and a p-type layer so as to form a light emitting layer; (b) forming a light transmitting conductive layer on a surface of the semiconductor lamination portion; (c) forming an insulating film on the light transmitting conductive layer; (d) forming a photo resist film on a surface of the insulating film and forming a pattern for forming concaves and convexes; (e) patterning the insulating film by using the photo resist film for a mask; and (f) forming a concave-convex pattern on the light transmitting conductive layer by etching the light transmitting conductive layer by using the insulating film for a mask. - View Dependent Claims (8)
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Specification