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Semiconductor Light Emitting Device and Method for Manufacturing the Same

  • US 20090026475A1
  • Filed: 12/28/2006
  • Published: 01/29/2009
  • Est. Priority Date: 12/29/2005
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a substrate;

    a semiconductor lamination portion made of nitride semiconductor which is provided on one surface of the substrate, and formed by laminating an n-type layer and a p-type layer so as to form a light emitting layer;

    a light transmitting conductive layer provided at a surface side of the semiconductor lamination portion;

    a first electrode provided on the light transmitting conductive layer so as to be electrically connected to a conductivity type layer of the surface side of the semiconductor lamination portion; and

    a second electrode provided so as to be electrically connected to a conductivity type layer of a lower layer side of the semiconductor lamination portion,wherein a plurality of concaves are formed so as to leave a part of the light transmitting conductive layer on a bottom surface of each of the concaves, thereby a concave-convex pattern is formed on the surface of the light transmitting conductive layer.

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