LIGHT EMITTING DIODE DEVICE

• US 20090026484A1
• Filed: 10/31/2007
• Published: 01/29/2009
• Est. Priority Date: 07/25/2007
• Status: Active Grant

• Current Assignee: Everlight Electronics Company Limited
• Original Assignee: Everlight Electronics Company Limited
• Inventors: Huang, Szu-Wei, Chang, Chia-Hsien, Hsu, Chin-Yuan
• Granted Patent: US 7,872,277 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.

Claims

1. In a light emitting diode device having a base, a substrate, a lead frame and an LED chip wherein the substrate and the lead frame are set on the base, an improvement comprising:

a first mixed layer formed between the substrate and the LED chip, and comprising a glue and a thermal conductance insulating material wherein the thermal conductance insulating material is at least one of a diamond carbon, a diamond-like carbon and a ceramic.

2. The light emitting diode device of claim 1, wherein the glue is at least one of an epoxy resin, silicone resin and poly carbonate.

3. The light emitting diode device of claim 2, wherein the ceramic is at least one of alumina, aluminum nitride, boron nitride and silicon carbide.

4. The light emitting diode device of claim 1, further comprising a second mixed layer covering a sidewall of the LED chip and the substrate.

5. The light emitting diode device of claim 4, wherein the second mixed layer comprises the glue and the thermal conductance insulating material.

6. The light emitting diode device of claim 5, wherein the glue is at least one of an epoxy resin, silicone resin and poly carbonate.

7. The light emitting diode device of claim 6, wherein the ceramic at least one of alumina, aluminum nitride, boron nitride and silicon carbide.

8. The light emitting diode device of claim 1, further comprising a third mixed layer injected in the base and covering the substrate and the LED chip.

9. The light emitting diode device of claim 8, wherein the third mixed layer comprises the glue and the thermal conductance insulating material.

10. The light emitting diode device of claim 9, wherein the glue is at least one of an epoxy resin, silicone resin and poly carbonate.

11. The light emitting diode device of claim 10, wherein the ceramic is at least one of alumina, aluminum nitride, boron nitride and silicon carbide.

12. In a light emitting diode device having a base, a substrate, a lead frame and an LED chip wherein the substrate and the lead frame are set on the base, and the LED chip is connected with the substrate through a flip chip bonding process, an improvement comprising:

a first mixed layer formed between the substrate and the LED chip and comprising a glue and a thermal conductance insulating material wherein the thermal conductance insulating material is at least one of a diamond carbon, a diamond-like carbon and a ceramic.

13. The light emitting diode device of claim 12, wherein the glue is at least one of an epoxy resin, silicone resin and poly carbonate.

14. The light emitting diode device of claim 13, wherein the ceramic is at least one of alumina, aluminum nitride, boron nitride and silicon carbide.

15. The light emitting diode device of claim 12, further comprising a second mixed layer injected in the base and covered the substrate and the LED chip.

16. The light emitting diode device of claim 15, wherein the second mixed layer comprises the glue and the thermal conductance insulating material.

17. The light emitting diode device of claim 16, wherein the glue is at least one of an epoxy resin, silicone resin and poly carbonate.

18. The light emitting diode device of claim 17, wherein the ceramic is at least one of alumina, aluminum nitride, boron nitride and silicon carbide.