Semiconductor Device and Method of Manufacturing Semiconductor Device
First Claim
1. A semiconductor device comprising:
- a gate insulating film formed on a main plane of a semiconductor substrate;
a gate electrode formed on the gate insulating film;
a sidewall insulating film formed on side planes of the gate electrode;
a source/drain region formed while sandwiching the gate electrode;
an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode and the sidewall insulating film; and
a stressed film including the gate electrode and the sidewall insulating film and extending to a position adjacent to the elevated region,wherein the sidewall insulating film and the elevated region are not in contact with each other but a gap is provided therebetween, and the stressed film is buried in the gap.
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Accused Products
Abstract
The present invention provides a semiconductor device and a method of manufacturing a semiconductor device in which a driving force can be increased by increasing a strain amount given by a stressed film in a MOS transistor including an elevated region.
On a silicon substrate, a device isolation region 102, a gate insulating film 103, a gate electrode 104, an extension 105, and a sidewall insulating film 106 are formed. After that, an elevated region is formed, and a source/drain region 108 and a silicide layer 109 are formed. Subsequently, the sidewall insulating film 106 is etched to provide a gap from the elevated region 107, and a stressed film 110 is buried in the gap.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate insulating film formed on a main plane of a semiconductor substrate; a gate electrode formed on the gate insulating film; a sidewall insulating film formed on side planes of the gate electrode; a source/drain region formed while sandwiching the gate electrode; an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode and the sidewall insulating film; and a stressed film including the gate electrode and the sidewall insulating film and extending to a position adjacent to the elevated region, wherein the sidewall insulating film and the elevated region are not in contact with each other but a gap is provided therebetween, and the stressed film is buried in the gap. - View Dependent Claims (3, 4, 5, 6, 7, 16, 18, 19)
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2. A semiconductor device comprising:
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a gate insulating film formed on a main plane of a semiconductor substrate; a gate electrode formed on the gate insulating film; a source/drain region formed while sandwiching the gate electrode; an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode; and a stressed film including the gate electrode and extending to a position adjacent to the elevated region, wherein the gate electrode and the elevated region are not in contact with each other but a gap is provided therebetween, and the stressed film is buried in the gap. - View Dependent Claims (14, 15, 17)
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8. A method of manufacturing a semiconductor device, comprising:
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forming a gate insulating film on a main plane of a semiconductor substrate; forming a gate electrode on the gate insulating film; forming a sidewall insulating film on side planes of the gate electrode; forming a source/drain region while sandwiching the gate electrode; forming an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode and the sidewall insulating film; forming a gap between the sidewall insulating film and the elevated region; and burying a stressed film in the gap. - View Dependent Claims (9, 10, 11, 13, 20)
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Specification