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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20090026505A1
  • Filed: 07/25/2008
  • Published: 01/29/2009
  • Est. Priority Date: 07/27/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a fin formed on the semiconductor substrate;

    a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film;

    an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle; and

    a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle.

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