SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate;
a fin formed on the semiconductor substrate;
a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film;
an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle; and
a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle.
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Abstract
A semiconductor device according to an embodiment includes: a semiconductor substrate; a fin formed on the semiconductor substrate; a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film; an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle; and a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a fin formed on the semiconductor substrate; a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film; an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle; and a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a semiconductor device, comprising:
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forming an insulating film on a semiconductor substrate on which fin is fabricated, so as to cover at least a portion of a side face of the fin; forming a trench having an opening on an upper side thereof in a region of the insulating film by processing the insulating film, the region being adjacent to the fin; forming a gate electrode on the insulating film in which the trench has been formed, so as to sandwich the both sides of the fin between its opposite portions via a gate insulating film; forming an extension layer by epitaxially growing a crystal using a side face of the fin as a base after forming the gate electrode to substantially block off the opening of the trench of the insulating film; lowering the height of the insulating film after forming the extension layer; and forming a silicide layer on a surface of the extension layer after lowering the height of the insulating film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification