METHODS OF FABRICATING DUAL FIN STRUCTURES AND SEMICONDUCTOR DEVICE STRUCTURES WITH DUAL FINS
First Claim
1. A method for fabricating a semiconductor device, comprising:
- forming at least two trenches in a substrate by removing portions of the substrate exposed through openings in a mask layer overlying the substrate;
applying a dielectric layer over the mask layer and the at least two trenches to fill the at least two trenches;
exposing the mask layer by removing at least a portion of the dielectric layer;
removing at least a portion of the mask layer and at least a portion of the substrate between the at least two trenches to form a recess in the substrate with protruding regions on opposite sides, upper surfaces of the protruding portions being covered by the mask layer;
removing at least a portion of the dielectric layer to expose an outer surface of the protruding regions of the substrate; and
removing the mask layer from the upper surfaces of the protruding regions.
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Accused Products
Abstract
Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair of shallow trench isolation (STI) structures as a mask to define a recess in a portion of the substrate between the pair of STI structures, and recessing the STI structures so that the resulting dual fin structure protrudes from an active surface of the substrate. The dual fin structure may be used to form single-gate, double-gate or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.
32 Citations
36 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming at least two trenches in a substrate by removing portions of the substrate exposed through openings in a mask layer overlying the substrate; applying a dielectric layer over the mask layer and the at least two trenches to fill the at least two trenches; exposing the mask layer by removing at least a portion of the dielectric layer; removing at least a portion of the mask layer and at least a portion of the substrate between the at least two trenches to form a recess in the substrate with protruding regions on opposite sides, upper surfaces of the protruding portions being covered by the mask layer; removing at least a portion of the dielectric layer to expose an outer surface of the protruding regions of the substrate; and removing the mask layer from the upper surfaces of the protruding regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 30, 31)
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18. A semiconductor device, comprising:
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a substrate with a protruding region between at least two trenches formed therein; a recess in the protruding region of the substrate; fin-like structures on opposite sides of the recess; and a dielectric layer filling the at least two trenches. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 32, 33)
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34. An apparatus comprising:
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a plurality of trenches formed in a substrate and filled with dielectric material; and an array of recesses with fin-like structures protruding on opposite sides formed in regions of substrate between the plurality of trenches. - View Dependent Claims (35, 36)
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Specification