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Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements

  • US 20090026533A1
  • Filed: 07/24/2007
  • Published: 01/29/2009
  • Est. Priority Date: 07/24/2007
  • Status: Abandoned Application
First Claim
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1. A vertical semiconductor power device comprising a plurality of semiconductor power cells having a drain disposed at a bottom of a semiconductor substrate with each of said cells comprising a gate surrounded by a body region encompassing a source region wherein:

  • said body region further comprising multiple body-dopant implanted regions having a non-Gaussian distribution dopant profile for reducing a width of a transition region transitioning between said multiple body-dopant implanted regions and an epitaxial region underneath having a different conductivity type from said multiple body-dopant implanted regions.

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