SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20090026610A1
• Filed: 07/22/2008
• Published: 01/29/2009
• Est. Priority Date: 07/27/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Semiconductor Company Limited (ON Semiconductor Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Kitagawa, Katsuhiko, Shinogi, Hiroyuki
• Granted Patent: US 7,944,015 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3185 the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/12 Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/14 Integrated circuits

Abstract

The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.

Claims

1. A semiconductor device comprising:

a semiconductor die comprising a circuit element formed on a front surface thereof;

a pad formed on the front surface of the die and connected to the circuit element;

a supporting body attached to the front surface of the die so as to cover a front surface of the pad;

an insulation film formed on a side surface of the die and a back surface of the die;

a wiring disposed on the insulating film so as to be on the back surface of the die and the side surface of the die and to be connected to a back surface of the pad; and

a protection film covering a side surface of the supporting body.

2. The semiconductor device of claim 1, wherein the protection film extends from the side surface of the supporting body so as to cover the pad and the back surface of the semiconductor.

3. The semiconductor device of claim 2, further comprising a conductive terminal disposed on and connected to the wiring through an opening formed in the protection film.

4. A method of manufacturing a semiconductor device, comprising:

providing a semiconductor substrate comprising a pad formed on a front surface thereof;

attaching a supporting body to the front surface of the substrate so as to cover a front surface of the pad;

forming an opening in the substrate from a back surface thereof so as to expose a back surface of the pad;

forming a wiring on the back surface of the substrate and a side surface of the substrate so as to be connected to the exposed back surface of the pad;

attaching a dicing tape to a surface of the supporting body which is not attached to the front surface of the substrate;

dicing the semiconductor substrate and the supporting body with the dicing tape attached to the supporting body so as to make a slit on the supporting body;

forming a protection film in the slit; and

dicing the protection film in the slit so as to leave part of the protection film on a side surface of the diced supporting body.

5. The method of claim 4, further comprising forming an opening in the protection film covering the wiring and forming a conductive terminal on the wiring through the opening of the protection film.

6. A method of manufacturing a semiconductor device, comprising:

providing a semiconductor substrate comprising a first insulation film formed on a front surface thereof and a pad formed on the first insulation film;

attaching a supporting body to the front surface of the substrate so as to cover a front surface of the pad;

forming an opening in the substrate from a back surface thereof so as to expose part of the first insulation film;

forming a second insulation film on the back surface of the substrate and the exposed part of the first insulation film;

removing a portion of the first insulation film and a portion of the second insulation film so as to expose at least a portion of a back surface of the pad;

forming a wiring on the back surface of the substrate and a side surface of the substrate so as to be connected to the exposed back surface of the pad;

forming a first protection film on the back surface of the semiconductor substrate so as to cover the wiring;

attaching a dicing tape to a surface of the supporting body which is not attached to the front surface of the substrate;

dicing the semiconductor substrate and the supporting body with the dicing tape attached to the supporting body so as to make a slit on the supporting body;

forming a second protection film in the slit; and

dicing the second protection film in the slit so as to leave part of the second protection film on a side surface of the diced supporting body.

7. The method of claim 6, further comprising forming an opening in the first protection film covering the wiring and forming a conductive terminal on the wiring through the opening of the first protection film.

8. A semiconductor device comprising:

a semiconductor die comprising a circuit element formed on a front surface thereof;

a supporting body attached to the front surface of the die; and

a protection film covering a side surface of the supporting body.

9. A semiconductor device comprising:

a semiconductor die comprising a circuit element formed on a front surface thereof;

a pad formed on the front surface of the die and connected to the circuit element;

a supporting body attached to the front surface of the die so as to cover a front surface of the pad;

an electrode portion disposed on the back surface of the die and connected to a back surface of the pad; and

a protection film covering a side surface of the supporting body.