Dynamic color or white light phosphor converted LED illumination system

• US 20090026913A1
• Filed: 07/26/2007
• Published: 01/29/2009
• Est. Priority Date: 07/26/2007
• Status: Abandoned Application

• Current Assignee: Lumination LLC
• Original Assignee: Lumination LLC
• Inventors: Mrakovich, Matthew Steven
• Application Number:
  US11/828,641
• Publication Number:
  US 20090026913A1
• Time in Patent Office: Days
• US Class Current: 313/498
• CPC Class Codes: H05B 45/20 Controlling the colour of the light

Abstract

A color tunable light emitting device includes multiple light emitting components such as light emitting diodes (LEDs) or laser diodes (LDs) with substantially the same emission characteristics, and multiple phosphors materials with different excitation and emission wavelengths, each excited by one of the light emitting components. The light emitting components are powered by an electrical circuit which allows separate control of the optical power output of the different light emitting components. The light from the light emitting components is arranged to impinge and excite a corresponding phosphor material such that the phosphors are excited and emit light at their characteristic wavelengths. By separately adjusting the power to each LED/LD, the amount of light emitted by each phosphor, and hence, through color mixing, the color of the light emitted, is varied.

Claims

1. A light emitting device comprising at least first and second semiconductor radiation emitting components, which emit radiation having a first peak wavelength, a first phosphor material radiationally coupled with said first semiconductor radiation emitting component, the first phosphor material capable of absorbing at least a part of the radiation from the first radiation emitting component and emitting light of a second wavelength, and a second phosphor material radiationally coupled to said second semiconductor radiation emitting component, which is capable of absorbing at least a part of the radiation from the second radiation emitting component and emitting light of a third wavelength, such that when power supplied to at least one of the first and second semiconductor radiation components is varied, the color of light emitted by the light emitting device is changed.

2. The light emitting device of claim 1, wherein the first phosphor is at least substantially isolated from the second radiation emitting component and the second phosphor is at least substantially isolated from the first radiation emitting component.

3. The light emitting device of claim 1, wherein the first and second radiation emitting components are selected from the group consisting of light emitting diodes and laser diodes.

4. The light emitting device of claim 1, wherein at least one of said first and second radiation emitting components comprise a plurality of light emitting diodes.

5. The light emitting device of claim 1, wherein at least one of said first and second phosphor materials comprise two or more phosphor compositions.

6. The light emitting device of claim 1, further including:

a controller for variably controlling power supplied to at least one of the first and second radiation emitting components separately from the other of the first and second radiation emitting components for varying the color of light emitted by the light emitting device.

7. The light emitting device of claim 6, wherein the power to both the first and the second radiation emitting components is separately variable.

8. The light emitting device of claim 6, wherein the controller includes a rheostat, which variably adjusts the power supplied to one of the first and second light emitting components.

9. The light source of claim 6, wherein the controller includes a control system which determines the amount of power to be supplied to the first and second light emitting components in accordance with a color of light selected by an operator.

10. The light emitting device of claim 1, wherein said first radiation emitting component and said first phosphor material comprise a first sub-array, and said second radiation emitting component and said second phosphor material comprise a second sub-array.

11. The light emitting device of claim 10, further comprising baffles between said first and second sub-arrays.

12. The light emitting device of claim 10, further comprising one or more additional sub-arrays, each additional sub-array comprising a radiation emitting component and a radiationally coupled phosphor material.

13. The light emitting device of claim 1, wherein said first and second phosphor materials are spaced apart from said first and second radiation emitting components such that a gap exists therebetween.

14. The light emitting device of claim 13, wherein said gap is filled with an encapsulant.

15. The light emitting device of claim 1, wherein said first and second phosphor materials are coated on a transparent substrate.

16. The light emitting device of claim 1, wherein said device comprises phosphor materials emitting red light, yellow light, blue light, and green light.

17. The light emitting device of claim 1, wherein said first and second phosphor materials comprise one or more phosphor compositions selected from the group including garnets activated with at least Ce³⁺, orthosilicates activated with at least Eu²⁺, sulfides activated with at least Eu²⁺, and nitrides, oxynitrides or sialons activated with at least Eu²⁺.

18. The light emitting device of claim 1, wherein said first and second phosphor materials comprise one or more phosphor compositions selected from the group including:

(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH);

Eu²⁺, Mn²⁺;

(Ba,Sr,Ca)BPO₅;

Eu²⁺, Mn²⁺;

(Sr,Ca)₁₀(PO₄)₆*vB₂O₃;

Eu²⁺ (wherein 0<

v≦

1);

Sr₂Si₃O₈*2SrCl₂;

Eu²⁺;

(Ca,Sr,Ba)₃MgSi₂O₈;

Eu²⁺, Mn²⁺;

BaAl₈O₁₃;

Eu²⁺;

2SrO*0.84P₂O₅*0.84P₂O₅*0.16B₂O₃;

Eu²⁺;

(Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺,Mn²⁺;

(Ba,Sr,Ca)Al₂O₄;

Eu²⁺;

(Y,Gd,Lu,Sc,La)BO₃;

Ce³⁺,Tb³⁺;

ZnS;

Cu⁺,Cl⁻

;

ZnS;

Cu⁺,Al³⁺;

ZnS;

Ag⁺,Cl⁻

;

ZnS;

Ag⁺,Al³⁺;

(Ba,Sr,Ca)₂Si_1-ξ

O_4-2ξ

;

Eu²⁺(wherein 0≦

ξ

≦

0.2);

(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇;

Eu²⁺;

(Sr,Ca,Ba)(Al,Ga,In)₂S₄;

Eu²⁺;

(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)_5-α

O_12-3/2α

;

Ce³⁺(wherein 0≦

α

≦

0.5);

(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂;

Eu²⁺,Mn²⁺;

Na₂Gd₂B₂O₇;

Ce³⁺,Tb³⁺;

(Sr,Ca,Ba,Mg,Zn)₂P₂O₇;

Eu²⁺,Mn²⁺;

(Gd,Y,Lu,La)₂O₃;

Eu³⁺,Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺,Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺,Bi³⁺;

(Ca,Sr)S;

Eu²⁺,Ce³⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ba,Sr,Ca)MgP₂O₇;

Eu²⁺, Mn²⁺;

(Y,Lu)₂WO₆;

Eu³⁺,Mo⁶⁺;

(Ba,Sr,Ca)β

Siγ

Nμ

;

Eu²⁺ (wherein 2β

+4γ

=3μ

);

Ca₃(SiO₄)Cl₂;

Eu²⁺;

(Lu,Sc,Y,Tb)_2-u-v Ce_vCa_1+uLi_wMg_2-wP_w(Si,Ge)_3-wO_12-u/2 (where −

0.5≦

u≦

1, 0<

v≦

0.1, and 0≦

w≦

0.2);

(Y,Lu,Gd)_2-φ

Ca_φ

Si₄N<sub>6+φ

C1-φ</sub>

;

C³⁺, (wherein 0≦

φ

≦

0.5);

(Lu,Ca,Li,Mg,Y)alpha-SiAION doped with Eu²⁺ and/or Ce³⁺;

(Ca,Sr,Ba)SiO₂N₂;

Eu²⁺,Ce³⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺;

Ca_1-c-fCe_cEu_fAl_1+cSi<sub>1−

c</sub>N₃, (where 0<

c≦

0.2, 0≦

f≦

0.2);

Ca_1-h-rCe_hEu_rAl_1-h(Mg,Zn)_hSiN₃,(where 0<

h≦

0.2, 0≦

r≦

0.2);

Ca_1-2s-tCe_s(Li,Na)_sEu_tAlSin₃, (where 0≦

s≦

0.2, 0≦

f≦

0.2, s+t>

0); and

Ca<sub>1-σ

-χ

-φ</sub>

Ce_σ

(Li,Na)_χ

Eu_φ

Al<sub>1+σ

-χ</sub>

Si<sub>1-σ

+χ</sub>

N₃, (where 0≦

σ

≦

0.2, 0<

χ

≦

0.4, 0≦

φ

≦

0.2).

19. The light emitting device of claim 1, wherein said first and second semiconductor radiation emitting components emit radiation having a peak wavelength in the range of from about 370 to 410 nm.

30. The light emitting device of claim 1, wherein said first radiation emitting component and said first phosphor material comprise a first sub-array, and said second radiation emitting component and said second phosphor material comprise a second sub-array.

31. The light emitting device of claim 30, further comprising baffles between said first and second sub-arrays.

32. The light emitting device of claim 30, further comprising one or more additional sub-arrays, each additional sub-array comprising a radiation emitting component and a radiationally coupled phosphor material.

33. The light emitting device of claim 1, wherein said first and second phosphor materials are spaced apart from said first and second radiation emitting components such that a gap exists therebetween.

34. The light emitting device of claim 33, wherein said gap is filled with an encapsulant.

20. A white light emitting device comprising at least first and second semiconductor radiation emitting components, which emit radiation having a first peak wavelength, a first white light emitting phosphor material radiationally coupled with said first semiconductor radiation emitting component, and a second white light emitting phosphor material radiationally coupled to said second semiconductor radiation emitting component, wherein the first and second phosphor materials have emissions with different x, y color coordinates on the 1931 CIE chromaticity diagram, taken either alone or with residual light bleed from the semiconductor radiation emitting components, such that when power supplied to at least one of the first and second semiconductor radiation components is varied, the CCT of white light emitted by the light emitting device is changed.

21. The light emitting device of claim 20, wherein the emissions from the first and second phosphor materials lie substantially on the black body locus.

22. The light emitting device of claim 20, wherein the first phosphor is at least substantially isolated from the second radiation emitting component and the second phosphor is at least substantially isolated from the first radiation emitting component.

23. The light emitting device of claim 20, wherein the first and second radiation emitting components are selected from the group consisting of light emitting diodes and laser diodes.

24. The light emitting device of claim 20, wherein at least one of said first and second radiation emitting components comprise a plurality of light emitting diodes.

25. The light emitting device of claim 20, wherein at least one of said first and second phosphor materials comprise two or more phosphor compositions.

26. The light emitting device of claim 20, further including:

a controller for variably controlling power supplied to at least one of the first and second radiation emitting components separately from the other of the first and second radiation emitting components for varying the color of light emitted by the light emitting device.

27. The light emitting device of claim 26, wherein the power to both the first and the second radiation emitting components is separately variable.

28. The light emitting device of claim 26, wherein the controller includes a rheostat, which variably adjusts the power supplied to one of the first and second light emitting components.

29. The light source of claim 26, wherein the controller includes a control system which determines the amount of power to be supplied to the first and second light emitting components in accordance with a color of light selected by an operator.

35. The light emitting device of claim 20, wherein said first and second phosphor materials are coated on a transparent substrate.

36. The light emitting device of claim 20, wherein at least one of said phosphor materials comprise red and blue emitting phosphor compositions.

37. The light emitting device of claim 20, wherein said first and second phosphor materials comprise one or more phosphor compositions selected from the group including garnets activated with at least Ce³⁺, orthosilicates activated with at least Eu²⁺, sulfides activated with at least Eu²⁺, and nitrides, oxynitrides or sialons activated with at least Eu²⁺.

38. The light emitting device of claim 20, wherein said first and second phosphor materials comprise one or more phosphor compositions selected from the group including:

(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH);

Eu²⁺,Mn²⁺;

(Ba,Sr,Ca)BPO₅;

Eu²⁺,Mn²⁺;

(Sr,Ca)₁₀(PO₄)₆*vB₂O₃;

Eu²⁺ (wherein 0<

v≦

1);

Sr₂Si₃O₈*2SrCl₂;

Eu²⁺;

(Ca,Sr,Ba)₃MgSi₂O₈;

Eu²⁺,Mn²⁺;

BaAl₈O₁₃;

Eu²⁺;

2SrO*0.84P₂O₅*0.16B₂O₃;

Eu²⁺;

(Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺,Mn²⁺;

(Ba,Sr,Ca)Al₂O₄;

Eu²⁺;

(Y,Gd,Lu,Sc,La)BO₃₊,Tb³⁺;

ZnS;

Cu⁺,Cl⁻

;

ZnS;

Cu⁺,Al³⁺;

ZnS;

Ag⁺,Al³⁺;

(Ba,Sr,Ca)₂Si_1-ξ

O_4-2ξ

;

Eu²⁺(wherein 0≦

ξ

≦

0.2);

(Ba,Sr, Ca)₂(Mg,Zn)Si₂O₇;

Eu²⁺;

(Sr,Ca,Ba)(Al,Ga,In)₂S₄;

Eu²⁺;

(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)_5-α

O<sub>12-3/2α

;

Ce</sub>³⁺ (wherein 0≦

α

≦

0.5);

(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂;

Eu²⁺,Mn²⁺;

Na₂Gd₂B₂O₇;

Ce³⁺,Tb³⁺;

(Sr,Ca,Ba,Mg,Zn)₂P₂O₇;

Eu²⁺,Mn²⁺;

(Gd,Y,Lu,La)₂O₃;

Eu³⁺,Bi³⁺;

(Gd,Y,Lu,La)₂O₂S;

Eu³⁺,Bi³⁺;

(Gd,Y,Lu,La)VO₄;

Eu³⁺,Bi³⁺;

(Ca,Sr)S;

Eu²⁺,Ce³⁺;

SrY₂S₄;

Eu²⁺;

CaLa₂S₄;

Ce³⁺;

(Ba,Sr,Ca)MgP₂O₇;

Eu²⁺,Mn²⁺;

(Y, Lu)₂WO₆;

Eu³⁺,Mo⁶⁺;

(Ba,Sr,Ca)_β

Si<sub>γ

Nμ</sub>

;

Eu²⁺ (wherein 2β

+4γ

=3μ

);

Ca₃(SiO₄)Cl₂;

Eu²⁺;

(Lu,Sc,Y,Tb)_2-u-vCe_vCa_1+uLi_wMg_2-wP_w(Si,Ge)_3-wO_12-u/2 (where −

0.5≦

u≦

1, 0<

v≦

0.1, and 0≦

w≦

0.2);

(Y,Lu,Gd)_2-φ

Ca_φ

Si₄N_6+φ

C_1-φ

;

Ce³⁺, (wherein 0≦

φ

≦

0.5);

(Lu,Ca,Li,Mg,Y)alpha-SiAlON doped with Eu²⁺ and/or Ce³⁺;

(Ca,Sr,Ba)SiO₂N₂;

Eu²⁺,Ce³⁺;

3.5MgO*0.5MgF₂*GeO₂;

Mn⁴⁺;

Ca_1-c-fCe_cEu_fAl₁₊Si<sub>1−

c</sub>N₃,(where 0<

c≦

0.2, 0≦

f≦

0.2);

Ca_1-h-rCe_hEu_rAl_1-h(Mg,Zn)_hSiN₃,(where 0<

h≦

0.2, 0≦

r≦

0.2);

Ca_1-2s-tCe_s(Li,Na)_sEu_tAlSiN₃,(where 0≦

s≦

0.2, 0≦

f≦

0.2, s+t>

0); and

Ca<sub>1-σ

-χ

-φ</sub>

Ce_σ

(Li,Na)_χ

Eu_φ

Al<sub>1+σ

-χ</sub>

Si<sub>1-σ

+χ</sub>

N₃, (where 0≦

σ

≦

0.2, 0<

χ

≦

0.4,0≦

σ

≦

0.2).

39. The light emitting device of claim 20, wherein said first and second semiconductor radiation emitting components emit radiation having a peak wavelength in the range of from about 370 to 410 nm.

40. A method of changing the color of light emitted by a light emitting device, said method comprising:

providing first and second light emitting component which emits light of a first wavelength, a first phosphor material which absorbs at least a part of the light from the first light emitting component and emits light of a second wavelength, and a second phosphor material which absorbs at least a part of the light from the second light emitting component and emits light of a third wavelength;

adjusting power supplied to at least one of the first and second light emitting components separately from the other of the first and second light emitting components such that the amount of light emitted by at least one of the first and second phosphor materials is correspondingly adjusted; and

combining the light emitted by the first and second phosphor materials.