Systems And Methods That Detect Changes In Incident Optical Radiation
First Claim
Patent Images
1. A detector for detecting changes in incident optical radiation, comprising:
- an insulating substrate having a first surface;
a first photoconductive active area, formed on the first surface of the insulating substrate, for detecting the incident optical radiation, the first active area formed of a group IV semiconductor; and
a first and a second electrical contact both electrically coupled to the first active area.
1 Assignment
0 Petitions
Accused Products
Abstract
Systems, methods and sensors detect changes in incident optical radiation. Current is driven through one or more active areas of a detector while the incident optical radiation illuminates the active areas. Voltage is sensed across one or more of the active areas, a change in the voltage being indicative of the changes in incident optical radiation.
-
Citations
44 Claims
-
1. A detector for detecting changes in incident optical radiation, comprising:
-
an insulating substrate having a first surface; a first photoconductive active area, formed on the first surface of the insulating substrate, for detecting the incident optical radiation, the first active area formed of a group IV semiconductor; and a first and a second electrical contact both electrically coupled to the first active area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A sensor for detecting a change in incident optical radiation, comprising:
-
a detector, including; an insulating substrate including; a layer of silicon, and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming a first surface; a first photoconductive active area formed on the first surface, for detecting the incident optical radiation, the first active area formed of silicon; and a first and a second electrical contact both electrically coupled to the first active area for driving an electrical current from a current source through the first active area; and electronics for measuring a change in voltage across the first active area to determine the change in the incident optical radiation. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
-
20. A sensor for detecting a change in incident optical radiation, comprising:
-
a detector, including; an insulating substrate including; a layer of silicon, and a layer of silicon dioxide formed on the layer of silicon, an upper surface of the silicon dioxide layer opposite to the silicon layer forming a first surface; a photoconductive active area for detecting the incident optical radiation, the active area formed of silicon on the first surface of the insulating substrate; and a first and a second electrical contact both electrically coupled to the active area, for applying a voltage from a voltage source across the active area; a load resistor electrically connected in series with the active area; and electronics for measuring a change in voltage across the load resistor, the change in voltage being indicative of the change in the incident optical radiation. - View Dependent Claims (21, 22, 23, 24)
-
-
25. A method for detecting a change in optical radiation, comprising the steps of:
-
driving an electric current through a first photoconductive active area while the optical radiation illuminates the first active area, the first active area formed of silicon on a first surface of an insulating substrate, the insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming the first surface; and measuring a voltage change across the first active area, the voltage change being indicative of the change in the optical radiation. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
-
-
36. A method for detecting a change in optical radiation, comprising the steps of:
-
applying a voltage across a first photoconductive active area while the optical radiation illuminates the first active area, the first active area formed of silicon on a first surface of an insulating substrate, the insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming the first surface; and measuring a voltage change across a first load resistor electrically connected in series with the first active area, the voltage change across the first load resistor being indicative of the change in the optical radiation. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44)
-
Specification