Nitride light emitting device and manufacturing method thereof

• US 20090028202A1
• Filed: 07/31/2006
• Published: 01/29/2009
• Est. Priority Date: 08/01/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Granted Patent: US 8,101,960 B2
• Time in Patent Office: Days
• US Class Current: 372/45.10
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.

Claims

1. A nitride light emitting device comprising a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate,

wherein the second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.

2. The nitride light emitting device according to claim 1, comprising a third conduction type cladding layer formed on the second conduction type cladding layer.

3. The nitride light emitting device according to claim 2, wherein the first conduction type cladding layer and the third conduction type cladding layer are n-type cladding layers, and the second conduction type cladding layer is a p-type cladding layer.

4. The nitride light emitting device according to claim 2, wherein the third conduction type cladding layer has an upper surface formed in an uneven shape.

5. The nitride light emitting device according to claim 2, wherein the third conduction type cladding layer has an upper surface that is formed flat.

6. The nitride light emitting device according to claim 1, comprising a transparent electrode formed on the second conduction type cladding layer.

7. The nitride light emitting device according to claim 6, wherein the transparent electrode is formed of a metal oxide.

8. The nitride light emitting device according to claim 6, wherein the transparent electrode is formed of at least one material selected from the group consisting of ITO, IZO (In—

ZnO), GZO (Ga—

ZnO), AZO (Al—

ZnO), AGZnO (Al—

Ga ZnO), IGZO (In-Gz ZnO), and IrOx.

9. The nitride light emitting device according to claim 6, wherein the transparent electrode has higher conductivity than that of the second conduction type cladding layer.

10. The nitride light emitting device according to claim 2, further comprising a transparent electrode formed on the third conduction type cladding layer.

11. The nitride light emitting device according to claim 10, wherein the transparent electrode is formed of a metal oxide.

12. The nitride light emitting device according to claim 10, wherein the transparent electrode is formed of at least one material selected from the group consisting of ITO, IZO (In—

ZnO), GZO (Ga—

ZnO), AZO (Al—

ZnO), AGZnO (Al—

Ga ZnO), IGZO (In—

Ga ZnO) and IrOx.

13. The nitride light emitting device according to claim 1, wherein the second conduction type cladding layer has a thickness of less than 150 nm.

14. A method of manufacturing a nitride light emitting device including a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate, the method comprising:

etching and patterning the second conduction type cladding layer; and

forming a transparent electrode on the patterned second conduction type cladding layer.

15. The method according to claim 14, wherein the transparent electrode is formed of a metal oxide.

16. The method according to claim 14, wherein the transparent electrode is formed of at least one material selected from the group consisting of ITO, IZO (In—

ZnO), GZO (Ga—

ZnO), AZO (Al—

ZnO), AGZnO (Al—

Ga ZnO), IGZO (In—

Ga ZnO), and IrOx.

17. The method according to claim 14, wherein the transparent electrode has higher conductivity than that of the second conduction type cladding layer.

18. The method according to claim 14, wherein the patterning is performed to form an uneven shape.

19. The method according to claim 14, comprising forming a third conduction type cladding layer on the patterned second conduction type cladding layer.

20. The method according to claim 14, wherein the second conduction type cladding layer has a thickness of less than 150 nm.