PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
First Claim
Patent Images
1. :
- A plasma processing apparatus comprising;
a processing chamber for accommodating therein a target substrate;
a substrate supporting table for mounting thereon the target substrate in the processing chamber;
a plasma bending unit for allowing a plasma of a processing gas supplied from an upper portion of the processing chamber to flow along non-linear passageways toward the target substrate mounted on the substrate supporting table, the plasma bending unit including at least a first plate and a second plate each of which is made of a first dielectric material and has a plurality of through holes, wherein the first plate and the second plate are arranged such that the through holes of the respective plates are not overlapped with each other; and
a gap adjusting member provided between the first plate and the second plate for adjusting a gap between the first and second plates.
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Abstract
In a plasma oxidation treatment apparatus 100, dual plate structure 60 is arranged above a susceptor 2. An upper plate 61 and a lower plate 62 are made of a dielectric material such as quartz, separately arranged in parallel at a prescribed interval, for instance an interval of 5 mm, and have a plurality of through holes 61a, 62a. The two plates are arranged one over another by shifting the positions so that the through hole 62a of the lower plate 62 and the through hole 61a of the upper plate 61 are not overlapped.
424 Citations
26 Claims
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1. :
- A plasma processing apparatus comprising;
a processing chamber for accommodating therein a target substrate; a substrate supporting table for mounting thereon the target substrate in the processing chamber; a plasma bending unit for allowing a plasma of a processing gas supplied from an upper portion of the processing chamber to flow along non-linear passageways toward the target substrate mounted on the substrate supporting table, the plasma bending unit including at least a first plate and a second plate each of which is made of a first dielectric material and has a plurality of through holes, wherein the first plate and the second plate are arranged such that the through holes of the respective plates are not overlapped with each other; and a gap adjusting member provided between the first plate and the second plate for adjusting a gap between the first and second plates. - View Dependent Claims (5, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
- A plasma processing apparatus comprising;
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2-4. -4. (canceled)
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6. :
- A plasma processing apparatus comprising;
a processing chamber for accommodating therein a target substrate; a substrate supporting table for mounting thereon the target substrate in the processing chamber; and a plasma bending unit for allowing a plasma of a processing gas supplied from an upper portion of the processing chamber to flow along non-linear passageways toward the target substrate mounted on the substrate supporting table, the plasma bending unit having a plate made of a porous dielectric material. - View Dependent Claims (7, 8)
- A plasma processing apparatus comprising;
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9. :
- A plasma processing method for forming a silicon oxide film by performing an oxidation process for oxidizing silicon on a surface of a target substrate by using an oxygen-containing plasma in a processing chamber, wherein
the oxidation process is performed in a state that a plasma bending unit for allowing the oxygen-containing plasma to flow along non-linear passageways is provided between the target substrate and a plasma generation region in the processing chamber, the plasma bending unit including at least a first plate and a second plate each of which is made of a first dielectric material and has a plurality of through holes, wherein the first plate and the second plate are arranged such that the through holes of the respective first and second plates are not overlapped with each other. - View Dependent Claims (14, 15)
- A plasma processing method for forming a silicon oxide film by performing an oxidation process for oxidizing silicon on a surface of a target substrate by using an oxygen-containing plasma in a processing chamber, wherein
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10-11. -11. (canceled)
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12. :
- A plasma processing method for forming a silicon oxide film by performing an oxidation process for oxidizing silicon on a surface of a target substrate by using an oxygen-containing plasma in a processing chamber, wherein
the oxidation process is performed in a state that a plasma bending unit for allowing the oxygen-containing plasma to flow along non-linear passageways is provided between the target substrate and a plasma generation region in the processing chamber, the plasma bending unit having a plate made of a porous dielectric material. - View Dependent Claims (13)
- A plasma processing method for forming a silicon oxide film by performing an oxidation process for oxidizing silicon on a surface of a target substrate by using an oxygen-containing plasma in a processing chamber, wherein
Specification