Mirror Magnetron Plasma Source

• US 20090032393A1
• Filed: 03/16/2007
• Published: 02/05/2009
• Est. Priority Date: 03/17/2006
• Status: Abandoned Application

• Current Assignee: General Plasma, Inc. (BASF SE)
• Original Assignee: General Plasma, Inc. (BASF SE)
• Inventors: Madocks, John
• Application Number:
  US12/293,159
• Publication Number:
  US 20090032393A1
• Time in Patent Office: Days
• US Class Current: 204/298.170
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering

Abstract

A new and useful plasma source is provided, comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate. The electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply.

Claims

1. A plasma source comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate;

wherein the electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply.

2. A plasma source as defined in claim 1, wherein the substrate is positioned within 100 mm from the electrode.

3. A plasma source as defined in claim 1, wherein the substrate is positioned within a distance of 20-50 mm from the electrode.

4. A plasma source as defined in claim 1, further including a separate magnetron electrode electrically connected to the alternating power supply;

the electrical connections between the alternating power supply, the electrode and the magnetron electrode (i) allowing current flow from the alternating power supply to the magnetron electrode during the negative cycle of the alternating power supply, and (ii) allowing current flow from the alternating power supply to the electrode disposed adjacent the portion of the grounded substrate during the positive cycle of the alternating power supply.

5. A plasma source as defined in claim 1, wherein the electrode and the center magnet are oriented such that the magnetron confinement is produced on the side of the electrode when the electrode is biased negative by the alternating power supply.

6. A plasma source as defined in claim 1, wherein the electrode is disposed in a containment structure that is configured to provide containment of plasma sustaining gas about the electrode and the portion of the substrate adjacent the electrode.

7. A plasma source as defined in claim 1, wherein the plasma source is located in a vacuum chamber and the electrode is disposed in a containment structure that is located in the vacuum chamber and electrically isolates the electric field associated with the mirror confinement from the environment of the vacuum chamber.