Method of Manufacturing Semiconductor Element, Semiconductor Element, Electronic Device, and Electronic Equipment
First Claim
1. A method of manufacturing a semiconductor element having a first electrode, a second electrode, and a semiconductor layer provided between the first electrode and the second electrode, the method comprising the steps of:
- a first step for forming layers mainly comprised of a semiconductor material having polymerizable groups on the side of one surface of the first electrode and on the side of one surface of the second electrode, respectively, anda second step for obtaining the semiconductor layer by integrating the two layers together by polymerizing the semiconductor materials via a polymerization reaction through their polymerizable groups in a state that the layer on the side of the first electrode and the layer on the side of the second electrode are made contact with each other.
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Abstract
The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. In order to achieve the object, the present invention is directed to a method of manufacturing a semiconductor element having an anode, a cathode, and a hole transport layer provided between the anode and the cathode, the method comprising steps of: a first step for forming layers mainly comprised of a hole transport material having polymerizable groups X on the side of one surface of the anode and on the side of one surface of the cathode, respectively, and a second step for obtaining the hole transport layer by integrating the two layers together by polymerizing the hole transport materials via a polymerization reaction through their polymerizable groups in a state that the layer on the side of the anode and the layer on the side of the cathode are made contact with each other.
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Citations
15 Claims
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1. A method of manufacturing a semiconductor element having a first electrode, a second electrode, and a semiconductor layer provided between the first electrode and the second electrode, the method comprising the steps of:
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a first step for forming layers mainly comprised of a semiconductor material having polymerizable groups on the side of one surface of the first electrode and on the side of one surface of the second electrode, respectively, and a second step for obtaining the semiconductor layer by integrating the two layers together by polymerizing the semiconductor materials via a polymerization reaction through their polymerizable groups in a state that the layer on the side of the first electrode and the layer on the side of the second electrode are made contact with each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification