Microelectronic device
First Claim
Patent Images
1. A microelectronic device, comprising:
- a thin film transistor including a zinc indium oxide semiconductor channel; and
an organic polymer passivation layer formed on said zinc indium oxide semiconductor channel.
1 Assignment
0 Petitions
Accused Products
Abstract
A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.
27 Citations
20 Claims
-
1. A microelectronic device, comprising:
-
a thin film transistor including a zinc indium oxide semiconductor channel; and an organic polymer passivation layer formed on said zinc indium oxide semiconductor channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of making a thin film transistor, comprising:
-
forming a zinc indium oxide semiconductor channel; and forming an organic polymer passivation layer on said zinc indium oxide semiconductor channel. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A thin film transistor manufactured by the process comprising:
-
forming an oxide semiconductor channel, wherein said oxide semiconductor channel is formed of a material chosen from one of zinc oxide, tin oxide, indium oxide, gallium oxide, zinc indium oxide, zinc tin oxide, indium gallium oxide, zinc indium gallium oxide, and a mixture thereof; and forming an organic polymer passivation layer on said oxide semiconductor channel. - View Dependent Claims (18, 19, 20)
-
Specification