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Microelectronic device

  • US 20090032812A1
  • Filed: 07/31/2007
  • Published: 02/05/2009
  • Est. Priority Date: 07/31/2007
  • Status: Active Grant
First Claim
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1. A microelectronic device, comprising:

  • a thin film transistor including a zinc indium oxide semiconductor channel; and

    an organic polymer passivation layer formed on said zinc indium oxide semiconductor channel.

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