SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

• US 20090033784A1
• Filed: 07/23/2008
• Published: 02/05/2009
• Est. Priority Date: 07/30/2007
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Machida, Takashi
• Application Number:
  US12/177,949
• Publication Number:
  US 20090033784A1
• Time in Patent Office: Days
• US Class Current: 348/311
• CPC Class Codes: H01L 27/14812 Special geometry or disposition of pixel-elements, address lines or gate-electrodes
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements

Abstract

A solid-state imaging device is provided and includes: a plurality of pairs of photoelectric conversion elements, each pair including a first photoelectric conversion element and a second photoelectric conversion element which are adjacent to each other; a charge transfer path that is disposed adjacently to the first photoelectric conversion element and that transfers in a first direction an electric charge stored in the first photoelectric conversion element; a first charge reading section that is disposed between the charge transfer path and the first photoelectric conversion element and that reads the electric charge stored in the first photoelectric conversion element to the charge transfer path; and a second charge reading section that is disposed between the first photoelectric conversion element and the second photoelectric conversion element and that reads an electric charge stored in the second photoelectric conversion element to the first photoelectric conversion element.

Claims

1. A solid-state imaging device comprising:

a plurality of pairs of photoelectric conversion elements, each pair including a first photoelectric conversion element and a second photoelectric conversion element which are adjacent to each other;

a charge transfer path that is disposed adjacently to the first photoelectric conversion element and that transfers in a first direction an electric charge stored in the first photoelectric conversion element;

a first charge reading section that is disposed between the charge transfer path and the first photoelectric conversion element and that reads the electric charge stored in the first photoelectric conversion element to the charge transfer path; and

a second charge reading section that is disposed between the first photoelectric conversion element and the second photoelectric conversion element and that reads an electric charge stored in the second photoelectric conversion element to the first photoelectric conversion element.

2. The solid-state imaging device according to claim 1, wherein

the plurality of pairs of photoelectric conversion elements are arranged in such a way that a first photoelectric conversion element column including a plurality of first photoelectric conversion elements arranged in the first direction and a second photoelectric conversion element column including a plurality of second photoelectric conversion elements disposed adjacent to the respective first photoelectric conversion elements and arranged in the first direction are alternately arranged in a second direction perpendicular to the first direction, wherein the first photoelectric conversion element column and the second electric conversion element column which are continuously arranged in the second direction constitute a set of element column, and

the electric charge transfer path is disposed correspondingly in a side part of the set of element column.

3. The solid-state imaging device according to claim 2, wherein the second photoelectric conversion element is arranged at a position shifted from a position of the first photoelectric conversion element to a direction intersecting each of the first direction and the second direction.

4. The solid-state imaging device according to claim 1, wherein

the plurality of pairs of photoelectric conversion elements are arranged in such a way that a first photoelectric conversion element column including a plurality of first photoelectric conversion elements arranged in the first direction and a second photoelectric conversion element column including a plurality of second photoelectric conversion elements disposed adjacent to the respective first photoelectric conversion elements and arranged in the first direction are alternately arranged in a second direction perpendicular to the first direction, wherein four photoelectric conversion element columns which include two first photoelectric conversion element columns and two second electric conversion element columns and which are continuously arranged in the second direction constitute a set of element column, and

the electric charge transfer path is disposed correspondingly to the set of element column and between the first photoelectric conversion element column and the second photoelectric conversion element column which are not the first photoelectric conversion element column and the second photoelectric conversion element column at both ends of the set of element column.

5. The solid-state imaging device according to claim 4, wherein when a position of the first photoelectric conversion element in each pair of photoelectric conversion elements included in the four photoelectric conversion element columns constituting the set of element column is set to a reference position, the second photoelectric conversion element of a pair of photoelectric conversion elements located in one side of the electric charge transfer path are disposed at a position shifted from the reference position in a direction different from that of the second photoelectric conversion element of a pair of photoelectric conversion elements located in the other side of the electric charge transfer path.

6. The solid-state imaging device according to claim 5, wherein the direction from the reference position with respect to the second photoelectric conversion element of the pair of photoelectric conversion elements located in the one side of the electric charge transfer path is perpendicular to the direction from the reference position with respect to the second photoelectric conversion element of the pair of photoelectric conversion elements located in the other side of the electric charge transfer path.

7. The solid-state imaging device according to claim 1, wherein the second photoelectric conversion element has a potential shallower than that of the first photoelectric conversion element.

8. The solid-state imaging device according to claim 7, wherein the second photoelectric conversion element has an area smaller than that of the first photoelectric conversion element.

9. The solid-state imaging device according to claim 1, wherein the first and second photoelectric conversion elements have different sensitivity for detecting light.

10. The solid-state imaging device according to claim 9, wherein the first photoelectric conversion element detects light having the same wavelength area as that of light detected by the second photoelectric conversion element.

11. The solid-state imaging device according to claim 1, further comprising a plurality of electrodes arranged above the second charge reading section and in a direction where the pair of photoelectric conversion elements are arranged, wherein a voltage can be independently applied to each of the plurality of electrodes.

12. An imaging apparatus comprising:

a solid-state imaging device according to claim 11; and

a voltage applying unit that applies a voltage to the plurality of electrodes, wherein the voltage applying unit shifts a timing for applying the voltage to the plurality of electrodes to move an electric charge from the second photoelectric conversion element to the first photoelectric conversion element.

13. The imaging apparatus according to claim 12, wherein the voltage applying unit applies a lower voltage to an electrode of the plurality of electrodes as the electrode is nearer to the second photoelectric conversion element.

14. An imaging apparatus comprising:

a solid-state imaging device according to claim 11; and

a voltage applying unit that applies a voltage to the plurality of electrodes, wherein the voltage applying unit applies a lower voltage to an electrode of the plurality of electrodes as the electrode is nearer to the second photoelectric conversion element.

15. An imaging device comprising a solid-state imaging device according to claim 1.