Semiconductor Device and Method of Manufacturing the Semiconductor Device
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Abstract
In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.
283 Citations
56 Claims
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1-24. -24. (canceled)
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25. A liquid crystal display device comprising:
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a pixel portion comprising a plurality of pixels over a first substrate, each of the plurality pixels comprising; a thin film transistor comprising a gate electrode, a first insulating layer over the gate electrode, a semiconductor layer over the first insulating layer, and a source region and a drain region over the first semiconductor layer; a source wiring connected to the source region; a drain wiring connected to the drain region; a second insulating layer comprising an inorganic material over the source wiring and the drain wiring; a third insulating layer comprising an organic material over the second insulating layer; and a pixel electrode over the third insulating layer and connected to one of the source wiring and the drain wiring through a first contact hole of the second insulating layer and a second contact hole of the third insulating layer; an input terminal portion around the pixel portion over the first substrate, the input terminal portion comprising; a first conductive layer comprising the same material as the gate electrode; and a second conductive layer comprising the same material as the pixel electrode over the first layer; a second substrate opposing to the first substrate; a fourth insulating layer comprising an organic material under the second substrate; a transparent conductive film under the fourth insulating layer; and a sealant containing a spacer bonding to the first substrate and the second substrate, wherein the sealant is overlapped with the fourth insulating layer and is not overlapped with the third insulating layer. - View Dependent Claims (29, 33, 37, 41, 45, 49, 53)
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26. A liquid crystal display device comprising:
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a pixel portion comprising a plurality of pixels over a first substrate, each of the plurality pixels comprising; a thin film transistor comprising a gate electrode, a first insulating layer over the gate electrode, a semiconductor layer over the first insulating layer, and a source region and a drain region over the first semiconductor layer; a source wiring connected to the source region; a drain wiring connected to the drain region; a second insulating layer comprising an inorganic material over the source wiring and the drain wiring; a third insulating layer comprising an organic material over the second insulating layer; and a pixel electrode over the third insulating layer and connected to one of the source wiring and the drain wiring through a first contact hole of the second insulating layer and a second contact hole of the third insulating layer; an input terminal portion around the pixel portion over the first substrate, the input terminal portion comprising; a first conductive layer comprising the same material as the gate electrode; and a second conductive layer comprising the same material as the pixel electrode over the first layer; a second substrate opposing to the first substrate; a fourth insulating layer comprising an organic material under the second substrate; a transparent conductive film under the fourth insulating layer; and a sealant containing a spacer bonding to the first substrate and the second substrate, wherein the sealant is formed outside side surfaces of the third insulating layer and inside side surfaces of the fourth insulating layer. - View Dependent Claims (30, 34, 38, 42, 46, 50, 54)
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27. A liquid crystal display device comprising:
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a pixel portion comprising a plurality of pixels over a first substrate, each of the plurality pixels comprising; a thin film transistor comprising a gate electrode, a first insulating layer over the gate electrode, a semiconductor layer over the first insulating layer, and a source region and a drain region over the first semiconductor layer; a source wiring connected to the source region; a drain wiring connected to the drain region; a second insulating layer comprising an inorganic material over the source wiring and the drain wiring; a third insulating layer comprising an organic material over the second insulating layer; and a pixel electrode over the third insulating layer and connected to one of the source wiring and the drain wiring through a first contact hole of the second insulating layer and a second contact hole of the third insulating layer; an input terminal portion around the pixel portion over the first substrate, the input terminal portion comprising; a first conductive layer comprising the same material as the gate electrode; and a second conductive layer comprising the same material as the pixel electrode over the first layer; a second substrate opposing to the first substrate; a fourth insulating layer comprising an organic material under the second substrate; a transparent conductive film under the fourth insulating layer; and a sealant containing a spacer bonding to the first substrate and the second substrate, wherein the second conductive layer covers a side surface of the third insulating layer, a side surface of the second insulating layer, and a side surface of the first insulating layer. - View Dependent Claims (31, 35, 39, 43, 47, 51, 55)
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28. A liquid crystal display device comprising:
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a pixel portion comprising a plurality of pixels over a first substrate, each of the plurality pixels comprising; a thin film transistor comprising a gate electrode, a first insulating layer over the gate electrode, a semiconductor layer over the first insulating layer, and a source region and a drain region over the first semiconductor layer; a source wiring connected to the source region; a drain wiring connected to the drain region; a second insulating layer comprising an inorganic material over the source wiring and the drain wiring; a third insulating layer comprising an organic material over the second insulating layer; and a pixel electrode over the third insulating layer and connected to one of the source wiring and the drain wiring through a first contact hole of the second insulating layer and a second contact hole of the third insulating layer; an input terminal portion around the pixel portion over the first substrate, the input terminal portion comprising; a first conductive layer comprising the same material as the gate electrode; and a second conductive layer comprising the same material as the pixel electrode over the first layer; a second substrate opposing to the first substrate; a fourth insulating layer comprising an organic material under the second substrate; a transparent conductive film under the fourth insulating layer; and a sealant containing a spacer bonding to the first substrate and the second substrate, wherein the third insulating layer is removed at the input terminal portion while leaving the fourth insulating layer at the input terminal portion. - View Dependent Claims (32, 36, 40, 44, 48, 52, 56)
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Specification