Optical Measurement Apparatus and Method

• US 20090033931A1
• Filed: 04/02/2008
• Published: 02/05/2009
• Est. Priority Date: 10/24/2005
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Pitter, Mark Charles, Sharples, Stephen David, Somekh, Michael Geoffrey, Kelly, Patrick Vincent, Murtagh, Martin Edward
• Granted Patent: US 7,616,307 B2
• Time in Patent Office: Days
• US Class Current: 356/317
• CPC Class Codes: G01N 2021/1725 Modulation of properties by light, e.g. photoreflectance
• CPC Class Codes: G01N 21/1717 with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

Abstract

An optical modulation spectroscopy system comprises a probe beam source and components for directing the probe beam at a sample. It also may comprise a modulated pump beam source and components for directing a modulated pump beam at the sample. A dispersive system may disperse the reflected probe beam into constituent wavelengths to provide dispersed beams. A detector array may detect multiple dispersed reflected probe beams and processes a signal corresponding to each. Thus, measurement may be multiplexed for very fast performance.

Claims

1. An optical modulation spectroscopy system comprising:

a probe beam source;

a probe beam directed at a sample to give rise to a reflected probe beam;

a pump beam source;

a modulator for modulating a pump beam;

a modulated pump beam directed at a sample;

a dispersive system for dispersing the reflected probe beam into constituent wavelengths to provide dispersed beams; and

a detection system for detecting a plurality of the dispersed reflected probe beams, and for processing a signal corresponding to each, the detection system comprising;

an array of detectors and a circuit, with a detector for detecting each of at least some of said dispersed beams; and

wherein each detector produces as output an electrical signal which comprises both a DC signal, proportional to the reflectance of a dispersed beam and an AC modulated signal at the modulation frequency proportional to the modulation of the reflectance of a dispersed beam.

2. The system according to claim 1, wherein each detector is a photodetector pixel.

3. The system according to claim 1, wherein the DC signal is larger relative to the AC signal and the dynamic range of the detector is sufficient to detect both the DC signal and the AC signal.

4. The system according to claim 1, wherein the circuit provides clock and control pulses to the detectors and a synchronized reference waveform signal to the modulator.

5. The system according to claim 4, wherein the detection system measures each dispersed beam by multiplexed readout of signals from the detectors at a plurality of times at known phase steps during each period of the modulation, and the detection system calculates the photoreflectance signal using a phase stepping demodulation algorithm applied to the multiple measurements at the known phase steps during each period of the modulation, to give a photoreflectance spectrum.

6. The system according to claim 5, wherein the detection system determines components of the modulation frequency which are in-phase and quadrature relative to the phase of the reference signal, and determines the in-phase and quadrature photoreflectance signals ratio at a plurality of beam photon energies to give the photoreflectance spectrum.

7. The system according to claim 5, wherein the detection system adds an arbitrary phase angle to the phase step angle used in the phase stepping demodulation algorithm such that the entire modulated reflectance signal and the photoreflectance signal are adjusted such that they are in-phase with the reference signal.

8. The system according to claim 5, wherein the detection system performs a readout a plurality of times, each corresponding to a period of the modulation.

9. A modulation spectroscopy method carried out by a modulation spectroscopy system, the method comprising:

directing a probe beam at a sample to give rise to a reflected probe beam;

modulating a pump beam, and directing the modulated pump beam at the sample;

dispersing the reflected probe beam with a dispersive system into constituent wavelengths to provide dispersed beams;

detecting a plurality of the dispersed reflected probe beams with a detection system and processing a signal corresponding to each, with the detection system comprising;

an array of detectors and a circuit, with a detector detecting each of at least one of said dispersed beams; and

each detector produces as output an electrical signal which comprises both a DC signal, proportional to the reflectance of a dispersed beam and an AC modulated signal at the modulation frequency proportional to the modulation of the reflectance of a dispersed beam.

10. The method as claimed in claim 9, wherein the DC signal is larger relative to the AC signal and the dynamic range of the detector is sufficient to detect both the DC signal and the AC signal.

11. The method as claimed in claim 9, wherein the circuit provides clock and control pulses to the detectors and a synchronised reference waveform signal to the modulator.

12. The method as claimed in claim 11, wherein the detection system:

measures simultaneously each dispersed beam by multiplexed readout of signals from the detectors at a plurality of times at known phase steps during each period of the modulation; and

calculates the photoreflectance signal using a phase stepping demodulation algorithm applied to the multiple measurements at the known phase steps during each period of the modulation, to give a photoreflectance spectrum.

13. The method as claimed in claim 12, wherein the detection system:

determines components of the modulated reflectance signal which are in-phase and quadrature relative to the phase of the reference signal; and

determines the in-phase and quadrature photoreflectance signals ratio at a plurality of beam photon energies to give the photoreflectance spectrum.

14. The method as claimed in claim 12, wherein the detection system adds an arbitrary phase angle to the phase step angle used in the phase stepping demodulation algorithm such that the entire modulated reflectance signal and the photoreflectance signal are adjusted such that they are in-phase with the reference signal.

15. The method as claimed in claim 12, wherein the detection system performs a readout a plurality of times, each corresponding to a period of the modulation.

16. The method as claimed in claim 12, wherein a part of the photoreflectance spectrum varies in magnitude at different probe beam photon energies and comprises one or more photoreflectance lineshapes.

17. The method as claimed in claim 16, wherein the sample is a semiconductor,

semiconductor crystal structure, or a semiconductor wafer comprising:

at least one semiconductor device and structure; and

the pump beam is provided by a light source whose photon energy is at least greater than the fundamental bandgap energy of one of the semiconductors; and

at least one photoreflectance lineshape is measured which corresponds to a direct interband electronic transition in the semiconductor layer.

18. The method as claimed in claim 17, wherein the photoreflectance lineshape is analyzed to yield the energy of the direct interband electronic transition.

19. The method as claimed in claim 17, wherein the photoreflectance lineshape is analyzed to yield at least one of the energy, the broadening parameter, the amplitude and the phase of the direct interband electronic transition.

20. The method as claimed claim 16, wherein the photoreflectance lineshape is analyzed to yield a quantum well or quantum dot transition energy in part or all of the sample.

21. The method as claimed in claim 16, wherein the photoreflectance lineshape is analyzed to yield an intersubband transition energy in part or all of the sample.

22. The method as claimed in claim 16, wherein the photoreflectance lineshape is analyzed to yield an electric field strength in part or all of the sample.

23. The method as claimed claim 16, wherein at least two photoreflectance lineshapes are measured which correspond to at least two direct interband electronic transitions in either the same or different semiconductor layers which have generated them, and the photoreflectance lineshapes are analyzed to yield at least one of the energy of these direct interband electronic transitions, an intersubband transition energy, a quantum well or quantum dot transition energy or the broadening parameter, the amplitude and the phase of these transitions, or an electric field strength in part of all of the sample.

24. The method as claimed in claim 16, further comprising analyzing the energy of at least one of the direct interband electronic transitions, measured by photoreflectance spectroscopy, to measure the strain in the semiconductor layer to which it is associated.

25. The method as claimed in any of claim 19, further comprising analyzing at least one of the energy, the broadening parameter, the amplitude and the phase, of at least one of the direct interband electronic transitions, measured by photoreflectance spectroscopy, to measure parameters relating to at least one of the crystallinity (damage/disorder) to the semiconductor or its surface.

26. The method as claimed in claim 16, further comprising analyzing the energy of one or more of the direct interband electronic transitions, measured by photoreflectance spectroscopy, to measure the alloy mole fraction in the semiconductor layer to which it is associated.

27. The method as claimed in claim 16, further comprising analyzing the energy of one or more of the direct interband or intersubband electronic transitions, measured by photoreflectance spectroscopy, to measure the sheet carrier concentration in the semiconductor layer to which it is associated.

28. The method as claimed in claim 16, further comprising:

performing the measurement at a multiplicity of angles of incidence; and

performing an analyzis of the photoreflectance spectra to determine the quantum well transition energy in a semiconductor structure which is constructed to have an optical cavity, such as a semiconductor structure used for making a laser diode, a light emitting diode, a vertical cavity surface emitting laser or a resonant cavity light emitting diode.