METHODS AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE IN A PROCESSING CHAMBER
First Claim
1. An apparatus for manufacturing a semiconductor device, comprising:
- a process chamber configured to perform a plurality of different processes on a substrate;
a gas supply unit configured to supply at least one process gas to the process chamber;
at least one upper electrode unit positioned at an upper portion of the process chamber;
at least one lower electrode unit opposite the upper electrode unit and configured to support a substrate thereon;
a driving member connected to at least one of the lower electrode unit and the upper electrode unit and configured to move the lower electrode unit and/or the upper electrode unit to control a distance between the upper and the lower electrode units; and
a power supply unit configured to apply a first power to the upper electrode unit and to apply a second power to the lower electrode unit.
1 Assignment
0 Petitions
Accused Products
Abstract
An apparatus for manufacturing a semiconductor device includes a process chamber configured to perform a plurality of different processes on a substrate. A gas supply unit is configured to supply at least one process gas to the process chamber. At least one upper electrode unit is positioned at an upper portion of the process chamber. At least one lower electrode unit is opposite the upper electrode unit and configured to support a substrate thereon. A driving member is connected to at least one of the lower electrode unit and the upper electrode unit and is configured to move the lower electrode unit and/or the upper electrode unit to control a distance between the upper and the lower electrode units. A power supply unit is configured to apply a first power to the upper electrode unit and to apply a second power to the lower electrode unit.
-
Citations
22 Claims
-
1. An apparatus for manufacturing a semiconductor device, comprising:
-
a process chamber configured to perform a plurality of different processes on a substrate; a gas supply unit configured to supply at least one process gas to the process chamber; at least one upper electrode unit positioned at an upper portion of the process chamber; at least one lower electrode unit opposite the upper electrode unit and configured to support a substrate thereon; a driving member connected to at least one of the lower electrode unit and the upper electrode unit and configured to move the lower electrode unit and/or the upper electrode unit to control a distance between the upper and the lower electrode units; and a power supply unit configured to apply a first power to the upper electrode unit and to apply a second power to the lower electrode unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
-
-
22. A method of forming a semiconductor device, the method comprising:
depositing a metal layer in a contact hole on a substrate and nitratating a portion of the metal layer in single process chamber without a vacuum break.
Specification