Manufacturing Method of Semiconductor Device, and Substrate Processing Apparatus

• US 20090035947A1
• Filed: 06/13/2006
• Published: 02/05/2009
• Est. Priority Date: 06/13/2005
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Harada, Kazuhiro, Horii, Sadayoshi, Itatani, Hideharu
• Granted Patent: US 8,435,905 B2
• Time in Patent Office: Days
• US Class Current: 438/765
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45534 Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 28/65 comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/318 the storage electrode having multiple segments

Abstract

The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.

Claims

1. A manufacturing method of a semiconductor device, comprising:

loading a substrate into a processing chamber;

forming a thin film having a desired thickness on said substrate by setting as one cycle the step of supplying into said processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on said substrate and causing this adsorption auxiliary gas to be adsorbed on said substrate, the step of supplying said source gas into said processing chamber, causing this source gas to react with said adsorption auxiliary gas on said substrate, and causing this source gas to be adsorbed on said substrate, and the step of supplying a reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times; and

unloading said substrate provided with said thin film from the inside of said processing chamber.

2. The manufacturing method of the semiconductor device according to claim 1, wherein said adsorption auxiliary gas is a gas for decomposing a ligand of said source gas.

3. The manufacturing method of the semiconductor device according to claim 1, wherein said adsorption auxiliary gas is a gas containing oxygen atoms.

4. The manufacturing method of the semiconductor device according to claim 1, wherein said adsorption auxiliary gas is oxygen gas, water vapor, or a hydroxyl radical.

5. The manufacturing method of the semiconductor device according to claim 1, wherein said reaction gas is a gas that reacts with said source gas adsorbed on said substrate to form a thin film, and cleans the surface of said substrate.

6. The manufacturing method of the semiconductor device according to claim 1, wherein said reaction gas is a gas that reacts with said source gas adsorbed on said substrate to form a thin film, and removes oxygen adsorbed on said substrate, or replaces the oxygen adsorbed on said substrate with a material other than the oxygen, or removes carbon adsorbed on said substrate, or removes said source gas itself adsorbed on said substrate.

7. The manufacturing method of the semiconductor device according to claim 1, wherein said reaction gas is a gas not containing oxygen atoms.

8. The manufacturing method of the semiconductor device according to claim 1, wherein said reaction gas is a gas obtained by activating a gas containing hydrogen atoms, a gas containing nitrogen atoms, and argon gas by plasma.

9. The manufacturing method of the semiconductor device according to claim 1, wherein said reaction gas is a gas obtained by activating hydrogen gas or ammonia gas by plasma.

10. The manufacturing method of the semiconductor device according to claim 1, wherein in said step of forming the thin film, the thin film having a desired thickness is formed on said substrate by a thermal CVD method by simultaneously supplying said source gas and a gas containing oxygen atoms into said processing chamber after repeating said cycle a plurality of times.

11. The manufacturing method of the semiconductor device according to claim 1, wherein said liquid source is a liquid source containing ruthenium atoms, and said thin film formed thereby is a film containing ruthenium atoms.

12. A manufacturing method of the semiconductor device, comprising:

loading a substrate into a processing chamber;

forming a thin film having a desired thickness on said substrate by setting as one cycle the step of supplying into said processing chamber a ligand-decomposing gas that decomposes the ligand of a source gas vaporized from a liquid source, and causing this ligand-decomposing gas to be adsorbed on said substrate, the step of supplying said source gas into said processing chamber, causing this source gas to react with said ligand-decomposing gas on said substrate, and causing this source gas to be adsorbed on said substrate, and the step of supplying a reaction gas into said processing chamber, and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times; and

unloading said substrate provided with said thin film from the inside of said processing chamber.

13. A manufacturing method of the semiconductor device, comprising:

loading a substrate into a processing chamber;

forming a thin film having a desired thickness on said substrate by setting as one cycle the step of supplying into said processing chamber a gas containing oxygen atoms and causing this gas to be adsorbed on said substrate, the step of supplying into said processing chamber a source gas vaporized from a liquid source, causing this source gas to react with said gas containing oxygen atoms on said substrate, and causing this source gas to be adsorbed on said substrate, and the step of supplying into said processing chamber a reaction gas not containing oxygen atoms and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times; and

unloading said substrate provided with said thin film from the inside of said processing chamber.

14. A manufacturing method of the semiconductor device, comprising:

loading a substrate into a processing chamber;

forming a thin film having a prescribed thickness as an initial film on said substrate, by setting as one cycle the step of supplying into said processing chamber a source gas vaporized from a liquid source and causing this source gas to be adsorbed on said substrate, the step of supplying a reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times;

forming a thin film having a desired thickness on said thin film having the prescribed thickness formed in said initial film forming step, by setting as one cycle the step of supplying into said processing chamber an adsorption auxiliary gas for aiding adsorption of said source gas on said substrate and causing this adsorption auxiliary gas to be adsorbed on said substrate, the step of supplying said source gas into said processing chamber, causing this source gas to react with said adsorption auxiliary gas on said substrate, and causing this source gas to be adsorbed on said substrate, and the step of supplying said reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times; and

unloading said substrate provided with said thin film from the inside of said processing chamber.

15. A substrate processing apparatus, comprising:

a processing chamber for processing a substrate;

a source gas supply line for supplying into said processing chamber a source gas vaporized from a liquid source;

a reaction gas supply line for supplying into said processing chamber a reaction gas that reacts with said source gas;

an adsorption auxiliary gas supply line for supplying into said processing chamber an adsorption auxiliary gas for aiding adsorption of said source gas on said substrate; and

a controller for carrying out control for forming a thin film having a desired thickness on said substrate by setting as one cycle of supplying said adsorption auxiliary gas into said processing chamber and causing this adsorption auxiliary gas to be adsorbed on said substrate, supplying said source gas into said processing chamber and causing this source gas to react with said adsorption auxiliary gas on said substrate and be adsorbed on said substrate, supplying said reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, and repeating this cycle a plurality of times.