METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS

• US 20090035949A1
• Filed: 12/28/2004
• Published: 02/05/2009
• Est. Priority Date: 08/03/2001
• Status: Active Grant

• Current Assignee: Antti Niskanen, Jaakko Niinisto, Markku Leskela, Matti Putkonen, Mikko Ritala, Petri Raisanen
• Original Assignee: Antti Niskanen, Jaakko Niinisto, Markku Leskela, Matti Putkonen, Mikko Ritala, Petri Raisanen
• Inventors: Niinisto, Jaakko, Niskanen, Antti, Raisanen, Petri, Ritala, Mikko, Leskela, Markku, Putkonen, Matti
• Granted Patent: US 7,498,272 B2
• Time in Patent Office: Days
• US Class Current: 438/785
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

Claims

1. An atomic layer deposition (ALD) process for depositing rare earth metal oxide thin films on a substrate in a reaction space, comprising the steps of:

a) feeding a vapor-phase pulse of a rare earth metal source chemical into the reaction space, said metal source chemical being selected from the group consisting of cyclopentadienyl compounds and cyclooctadienyl compounds of the rare earth metal;

b) contacting the vapor-phase pulse of the rare earth metal source chemical with the surface of the substrate;

c) purging the reaction space with the aid of an inert gas;

d) feeding a vapor-phase pulse of an oxygen source chemical into the reaction space;

e) purging the reaction space with the aid of an inert gas; and

f) repeating steps a) through e) to deposit a thin film consisting essentially of rare earth metal oxide.

2. The process of claim 1, wherein the oxygen source chemical is selected from the group consisting of water, hydrogen peroxide, a mixture of water and hydrogen peroxide, a mixture of oxygen and ozone, and oxygen plasma products.

3. The process of claim 1, wherein the rare earth metal source chemical is fed into the reaction space with the aid of an inert carrier gas.

4. The process of claim 1, wherein the oxygen source chemical is fed into the reaction space with the aid of an inert carrier gas.

6. The process of claim 1, wherein the substrate is a compound semiconductor.

7. The process of claim 6, wherein the substrate is GaAs.

8. An atomic layer deposition (ALD) process for depositing a thin film on a substrate in a reaction space comprising:

feeding a vapor-phase pulse of a metal source chemical into the reaction space;

removing unreacted vapor-phase metal source chemical from the reaction space;

feeding a vapor-phase pulse of an oxygen source chemical into the reaction space; and

removing unreacted vapor-phase oxygen source chemical from the reaction space,

wherein the metal source chemical is selected from the group consisting of tris(cyclopentadienyl)yttrium (Cp₃Y), tris(methylcyclopentadienyl)yttrium ((CpMe)₃Y) and tris(methylcyclopentadienyl)lanthanum ((CpMe)₃La),

wherein the thin film consists essentially of a rare earth metal oxide.

5. The process of claim 15, wherein the substrate is selected from the group consisting of a silicon wafer and soda lime glass.

9. The process of claim 8, wherein the oxygen source chemical is selected from the group consisting of water and a mixture of oxygen and ozone.

10. The process of claim 8, wherein the metal source chemical is (CpMe)₃Y.

11. The process of claim 10, wherein the temperature in the reaction space is between about 175°

C. and about 450°

C. and the pressure in the reaction chamber is between about 1 mbar and about 50 mbar.

12. The process of claim 11, wherein the temperature in the reaction space is between about 200°

C. and about 400°

C.

13. The process of claim 11, wherein the pressure in the reaction chamber is between about 1 mbar and about 2 mbar.

14. The process of claim 8, wherein the metal source chemical is Cp₃Y.

15. The process of claim 14, wherein the temperature in the reaction chamber is between about 175°

C. and about 400°

C., and the pressure in the reaction chamber is between about 1 mbar and about 50 mbar.

16. The process of claim 15, wherein the temperature in the reaction chamber is between about 250°

C. and about 300°

C.

17. The process of claim 15, wherein the pressure in the reaction chamber is between about 1 mbar and about 2 mbar.

18. The process of claim 22, wherein the metal source chemical is tris(methylcyclopentadienyl)lanthanum ((CpMe)₃La).

19. The process of claim 8, wherein the temperature in the reaction chamber is from about 160°

C. to about 165°

C. and the pressure in the reaction chamber is between about 1 mbar and about 50 mbar.

20. The process of claim 19, wherein the pressure in the reaction chamber is between about 1 mbar and about 2 mbar.

21. The process of claim 8, wherein the substrate is selected from the group consisting of a silicon wafer and soda lime glass.

22. The process of claim 8, wherein the substrate is a compound semiconductor.

23. The process of claim 22, wherein the substrate is GaAs.

24. A method of growing a thin film on a substrate from vapor-phase reactants comprising alternately introducing vapor-phase pulses of at least one metal source chemical and at least one oxygen source chemical into a reaction space containing a substrate to deposit a thin film consisting essentially of rare earth metal oxide, wherein the metal source chemical is a cyclopentadienyl or cyclooctadienyl compound of a rare earth metal selected from the group consisting of Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

25. (canceled)