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METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS

  • US 20090035949A1
  • Filed: 12/28/2004
  • Published: 02/05/2009
  • Est. Priority Date: 08/03/2001
  • Status: Active Grant
First Claim
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1. An atomic layer deposition (ALD) process for depositing rare earth metal oxide thin films on a substrate in a reaction space, comprising the steps of:

  • a) feeding a vapor-phase pulse of a rare earth metal source chemical into the reaction space, said metal source chemical being selected from the group consisting of cyclopentadienyl compounds and cyclooctadienyl compounds of the rare earth metal;

    b) contacting the vapor-phase pulse of the rare earth metal source chemical with the surface of the substrate;

    c) purging the reaction space with the aid of an inert gas;

    d) feeding a vapor-phase pulse of an oxygen source chemical into the reaction space;

    e) purging the reaction space with the aid of an inert gas; and

    f) repeating steps a) through e) to deposit a thin film consisting essentially of rare earth metal oxide.

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