SEMICONDUCTOR LIGHT EMITTING DEVICES WITH SEPARATED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor light emitting device (LED) configured to emit light having a first peak wavelength upon the application of a voltage thereto; and
first and second phosphor-containing regions on the LED that are configured to receive light emitted by the LED and to convert at least a portion of the received light to light having a longer wavelength than the first peak wavelength;
wherein the first phosphor-containing region is between the second phosphor-containing region and the LED so that a light ray emitted by the LED passes through the first phosphor-containing region before passing through the second phosphor-containing region; and
wherein the first phosphor-containing region is configured to convert light emitted by the LED to light having a second peak wavelength and the second phosphor-containing region is configured to convert light emitted by the LED to light having a third peak wavelength, shorter than the second peak wavelength.
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Accused Products
Abstract
A semiconductor device includes a semiconductor light emitting device (LED) that emits light having a first peak wavelength upon the application of a voltage thereto, and first and second phosphor-containing regions on the LED that receive the light and convert at least a portion of the light to light having a longer wavelength. The first phosphor-containing region is between the second phosphor-containing region and the LED so that a light ray emitted by the LED passes through the first phosphor-containing region before passing through the second phosphor-containing region. The first phosphor-containing region is configured to convert light emitted by the LED to light having a second peak wavelength and the second phosphor-containing region is configured to convert light emitted by the LED to light having a third peak wavelength, shorter than the second peak wavelength.
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Citations
34 Claims
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1. A semiconductor device, comprising:
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a semiconductor light emitting device (LED) configured to emit light having a first peak wavelength upon the application of a voltage thereto; and first and second phosphor-containing regions on the LED that are configured to receive light emitted by the LED and to convert at least a portion of the received light to light having a longer wavelength than the first peak wavelength; wherein the first phosphor-containing region is between the second phosphor-containing region and the LED so that a light ray emitted by the LED passes through the first phosphor-containing region before passing through the second phosphor-containing region; and wherein the first phosphor-containing region is configured to convert light emitted by the LED to light having a second peak wavelength and the second phosphor-containing region is configured to convert light emitted by the LED to light having a third peak wavelength, shorter than the second peak wavelength. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a semiconductor light emitting device (LED) configured to emit light having a first peak wavelength upon the application of a voltage thereto; and a plurality of first and second phosphor-containing regions on the LED that are configured to receive light emitted by the LED and to convert at least a portion of the received light to light having a longer wavelength than the first peak wavelength; wherein the first and second phosphor-containing regions comprise discrete phosphor containing regions on a surface of the LED structure; and wherein the first phosphor-containing region is configured to convert light emitted by the LED to light having a second peak wavelength and the second phosphor-containing region is configured to convert light emitted by the LED to light having a third peak wavelength, shorter than the second peak wavelength. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method of forming a semiconductor device including an active region configured to emit light and a window layer configured to transmit the emitted light, comprising:
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forming a plurality of discrete phosphor-containing regions on an LED structure that is configured to emit light having a first peak wavelength in response to an electrical current; and forming an overlayer on the LED structure including the discrete phosphor-containing regions, wherein the overlayer comprises a phosphor that is different than phosphor in the discrete phosphor-containing regions; wherein the discrete phosphor-containing regions are configured to convert light emitted by the LED to light having a second peak wavelength and the overlayer is configured to convert light emitted by the LED to light having a third peak wavelength that is shorter than the second peak wavelength. - View Dependent Claims (22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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24. The method of claim 46, further comprising texturing the overlayer to increase light extraction from the semiconductor device.
Specification