POWER RECTIFIERS AND METHOD OF MAKING SAME
First Claim
1. A semiconductor rectifier device comprising:
- a first semiconductor region of a first conductivity type and a first dopant concentration;
a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration;
a third semiconductor region adjacent said second semiconductor region having said second conductivity type and a third dopant concentration greater than said second dopant concentration; and
a gate proximate to but insulated from said second semiconductor region and electrically coupled to said third semiconductor region, wherein when said first semiconductor region is biased with respect to said gate and third semiconductor region in a first direction, an inversion region of said first conductivity type forms in said second semiconductor region extending from said first semiconductor region to said third semiconductor region, the inversion region forming a forward-biased tunnel diode junction with said third semiconductor region, and when said first semiconductor region is biased with respect to said gate and third semiconductor region in a second direction opposite said first direction, said inversion region does not form, and said semiconductor rectifier device functions as a reverse-biased diode.
2 Assignments
0 Petitions
Accused Products
Abstract
In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.
27 Citations
30 Claims
-
1. A semiconductor rectifier device comprising:
-
a first semiconductor region of a first conductivity type and a first dopant concentration; a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration; a third semiconductor region adjacent said second semiconductor region having said second conductivity type and a third dopant concentration greater than said second dopant concentration; and a gate proximate to but insulated from said second semiconductor region and electrically coupled to said third semiconductor region, wherein when said first semiconductor region is biased with respect to said gate and third semiconductor region in a first direction, an inversion region of said first conductivity type forms in said second semiconductor region extending from said first semiconductor region to said third semiconductor region, the inversion region forming a forward-biased tunnel diode junction with said third semiconductor region, and when said first semiconductor region is biased with respect to said gate and third semiconductor region in a second direction opposite said first direction, said inversion region does not form, and said semiconductor rectifier device functions as a reverse-biased diode. - View Dependent Claims (2, 3, 4)
-
-
5. A semiconductor rectifier device comprising:
-
a first semiconductor region of a first conductivity type and a first dopant concentration; a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration; a third semiconductor region adjacent said second semiconductor region having said second conductivity type and a third dopant concentration greater than said second dopant concentration; and a gate proximate to but insulated from said second semiconductor region and electrically coupled to said third semiconductor region, wherein when said first semiconductor region is biased with respect to said gate and third semiconductor region in a first direction, an inversion region of said first conductivity type forms in said second semiconductor region extending from said first semiconductor region to said third semiconductor region, the inversion region forming a PN junction with said third semiconductor region, and when said first semiconductor region is biased with respect to said gate and third semiconductor region in a second direction opposite said first direction, said inversion region does not form, and said semiconductor rectifier device functions as a reverse-biased PIN diode.
-
-
6. A method for operating a semiconductor device, said semiconductor device comprising a first semiconductor region of a first conductivity type and a first dopant concentration, a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration, a third semiconductor region adjacent said second semiconductor region and having a third dopant concentration greater than said second dopant concentration, and a gate proximate to but insulated from said semiconductor region, said gate being electrically coupled to said third semiconductor region, said method comprising:
-
applying a voltage in a first direction to said third semiconductor region and said gate relative to said first semiconductor region to thereby form an inversion region of said first conductivity type within said second semiconductor region, thereby forming a forward-biased tunnel diode junction between said third semiconductor region and said inversion region; and applying a voltage in a second direction to said third semiconductor region and said gate relative to said first semiconductor region to thereby cause said device to function as a reverse-biased diode.
-
-
7. A method for operating a semiconductor device, said semiconductor device comprising a first semiconductor region of a first conductivity type and a first dopant concentration, a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration, a third semiconductor region adjacent said second semiconductor region and having a third dopant concentration greater than said second dopant concentration, and a gate proximate to but insulated from said semiconductor region, said gate being electrically coupled to said third semiconductor region, said method comprising:
-
applying a voltage in a first direction to said third semiconductor region and said gate relative to said first semiconductor region to thereby form an inversion region of said first conductivity type within said second semiconductor region, thereby forming a forward-biased PN junction between said third semiconductor region and said inversion region; and applying a voltage in a second direction to said third semiconductor region and said gate relative to said first semiconductor region to thereby cause said device to function as a reverse-biased PIN diode.
-
-
8. A method for making a semiconductor device comprising:
-
providing a first semiconductor region of a first conductivity type and a first dopant concentration; providing a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration; providing a third semiconductor region adjacent said second semiconductor region having said second conductivity type and a third dopant concentration greater than said second dopant concentration; and providing a gate proximate to but insulated from said second semiconductor region and electrically coupled to said third semiconductor region, wherein when said first semiconductor region is biased with respect to said gate and third semiconductor region in a first direction, an inversion region of said first conductivity type forms in said second semiconductor region extending from said first semiconductor region to said third semiconductor region, the inversion region forming a forward-biased tunnel diode junction with said third semiconductor region, and when said first semiconductor region is biased with respect to said gate and third semiconductor region in a second direction opposite said first direction, said inversion region does not form, and said semiconductor rectifier device functions as a reverse-biased diode.
-
-
9. A method for making a semiconductor device comprising:
-
providing a first semiconductor region of a first conductivity type and a first dopant concentration; providing a second semiconductor region adjacent said first semiconductor region having a second conductivity type and a second dopant concentration; providing a third semiconductor region adjacent said second semiconductor region having said second conductivity type and a third dopant concentration greater than said second dopant concentration; and providing a gate proximate to but insulated from said second semiconductor region and electrically coupled to said third semiconductor region, wherein when said first semiconductor region is biased with respect to said gate and third semiconductor region in a first direction, an inversion region of said first conductivity type forms in said second semiconductor region extending from said first semiconductor region to said third semiconductor region, the inversion region forming a forward-biased diode junction with said third semiconductor region, and when said first semiconductor region is biased with respect to said gate and third semiconductor region in a second direction opposite said first direction, said inversion region does not form, and said semiconductor rectifier device functions as a reverse-biased PIN diode.
-
-
10. A method comprising:
-
providing a semiconductor device comprising a first semiconductor region of a first conductivity type and a first dopant concentration adjacent a second semiconductor region of a second conductivity type and a second dopant concentration, a third semiconductor region of said second conductivity type and a third dopant concentration greater than said second dopant concentration, and a gate electrically insulated from said second semiconductor region, applying a first electrical potential to said gate to form an inversion region of said first conductivity type so that a first PN junction exists between said inversion region and said third semiconductor region and said device functions as a diode using said first PN junction, applying a second electrical potential to said gate so that said inversion region does not form, and said device functions as a diode using a second PN junction between said first and second regions.
-
-
11. A method of manufacturing a semiconductor rectifier device, the method comprising:
-
depositing an N-drift region on an N++ substrate; implanting boron into the N-drift region to create a P-body layer; forming a plurality of trenches within the P-body layer, the trenches forming a plurality of P-body regions; forming a dielectric layer within each trench of the plurality of trenches; depositing conductive gate material to fill a remaining volume within each trench of the plurality of trenches; etching back the conductive gate material to form a planar surface above the plurality of P-body regions; depositing a layer of titanium and a layer of titanium nitride on the planar surface; annealing to create a layer of titanium silicide at an interface between the plurality of P-body regions and the titanium layer, and in accordance therewith, forming a δ
p++ layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor rectifier device comprising:
-
an anode terminal; a δ
p++ layer electrically coupled to the anode terminal;a P-body region located adjacent to the δ
p++ layer;an N-drift region located adjacent to the P-body region; an N++ substrate located adjacent to the N-drift region; a cathode terminal electrically coupled to the N++ substrate; a dielectric layer perpendicular to the δ
p++ layer and adjacent to the P-body region; anda conductive layer adjacent and parallel to the dielectric layer, the conductive layer electrically coupled to the anode terminal, wherein if a forward bias of the semiconductor rectifier device is provided across the anode and cathode terminals, the P-body region inverts and becomes an n-type conductive channel, and in accordance therewith, an interface of a portion of the δ
p++ layer and the n-type conductive channel form a tunnel diode. - View Dependent Claims (22, 23, 24, 25, 26)
-
-
27. A semiconductor rectifier device comprising:
-
an anode terminal; a δ
p++ layer electrically coupled to the anode terminal;a plurality of P-body regions each located adjacent to a portion of the δ
p++ layer;an N-drift region located adjacent to the plurality of P-body regions; a plurality of trenches having sides adjacent to the P-body regions and having a bottom protruding within the n-drift region, each trench comprising, a dielectric layer forming a first layer covering the sides and bottom of the trench, a conductive layer filling a remaining volume within the trench; an N++ substrate located adjacent to the N-drift region; a cathode terminal electrically coupled to the N++ substrate; wherein if a forward bias of the semiconductor rectifier device is provided across the anode and cathode terminals, each side of the P-body region of the plurality of P-body regions inverts and becomes an n-type conductive channel, and in accordance therewith, a plurality of interfaces between a plurality of portions of the δ
p++ layer and their corresponding n-type conductive channels form a plurality of tunnel diodes. - View Dependent Claims (28, 29, 30)
-
Specification