METHOD OF DEPOSITING SILICON OXIDE FILMS

• US 20090041952A1
• Filed: 07/23/2008
• Published: 02/12/2009
• Est. Priority Date: 08/10/2007
• Status: Abandoned Application

• Current Assignee: ASM Korea Ltd. (ASM International NV)
• Original Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Inventors: Park, Hyung Sang, Yoon, Tae Ho, Yoo, Yong Min
• Application Number:
  US12/178,300
• Publication Number:
  US 20090041952A1
• Time in Patent Office: Days
• US Class Current: 427/579
• CPC Class Codes: C01B 33/113 Silicon oxides; Hydrates thereof preparing monoxide by reduction of siliceous material C01B33/182
• CPC Class Codes: C04B 35/14 based on silica
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 23/647 Resistive arrangements H01L23/66, H01L23/62 take precedence
• CPC Class Codes: Y10T 428/31504 Composite [nonstructural laminate]

Abstract

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Claims

1. A method of depositing a silicon oxide film over a substrate, the method comprising one or more of deposition cycles, each of the cycles comprising:

supplying a plurality of pulses of silicon source gas of a compound represented by Formula 1 into a reactor in which a substrate is loaded,

wherein R is a straight or branched alkyl group having 1 to 4 carbons; and

providing an oxygen-containing gas over the substrate in the reactor.

2. The method of claim 1, wherein the compound comprises N, N, N′

, N′

-tetraethyldiaminosilane (SiH₂ [N(C₂H₅)₂]₂).

3. The method of claim 1, wherein at least one of the cycles comprises providing the oxygen-containing gas after supplying the silicon source gas.

4. The method of claim 3, wherein the at least one of the cycles further comprises supplying a purge gas into the reactor after supplying the silicon source gas and before providing the oxygen-containing gas.

5. The method of claim 3, wherein the at least one of the cycles further comprises providing a purge gas into the reactor after providing the oxygen-containing gas.

6. The method of claim 1, wherein providing the oxygen-containing gas comprises providing oxygen plasma.

7. The method of claim 6, wherein providing the oxygen plasma comprises generating the oxygen plasma in-situ in the reactor.

8. The method of claim 7, wherein generating the oxygen plasma comprises supplying oxygen gas into the reactor, and applying plasma power to the reactor to activate the oxygen gas.

9. The method of claim 8, wherein applying the plasma power comprises applying plasma power between about 0.05 W/cm² and about 2 W/cm².

10. The method of claim 1, wherein the oxygen-containing gas comprises ozone.

11. The method of claim 1, wherein at least one of the cycles comprises, in sequence:

supplying the silicon source gas; and

supplying a purge gas into the reactor to purge the silicon source gas from the reactor.

12. The method of claim 11, wherein the at least one of the cycles comprises providing the oxygen-containing gas substantially continuously throughout the at least one cycle.

13. The method of claim 11, wherein the at least one of the cycles comprises:

providing the oxygen-containing gas during supplying the silicon source gas; and

providing the oxygen-containing gas during supplying the purge gas.

14. The method of claim 13, wherein the one or more of deposition cycles comprise a first cycle and a second cycle,

wherein the first cycle comprises flowing at least one of the silicon source gas or the oxygen-containing gas in a first direction relative to the orientation of the substrate, and

wherein the second cycle comprises flowing at least one of the silicon source gas or the oxygen-containing gas in a second direction relative to the orientation of the substrate, the second direction being different from the first direction.

15. The method of claim 1, wherein each of the cycles is conducted at a process temperature between room temperature and about 400°

C.

16. The method of claim 1, wherein each of the cycles is conducted at a process pressure between about 0.1 torr and about 10 torr.

17. The method of claim 1, wherein providing the oxygen-containing gas comprises supplying the oxygen-containing gas at a gas flow rate between about 50 sccm and about 300 sccm.

18. The method of claim 1, wherein providing the oxygen-containing gas comprises supplying the oxygen-containing gas at a gas flow rate between about 50 sccm and about 1000 sccm.

19. An apparatus comprising:

a silicon oxide film made by the method of claim 1,

wherein the silieon oxide film has an atomic ratio of silicon to oxygen of about 1;

1, and

wherein the silicon oxide film has a refractive index between about 1.459 and about 1.483.

20. A method of forming a thin film over a substrate, the method comprising a first cycle which comprises:

supplying a vapor phase silicon precursor comprising diaminosilane over a substrate;

purging the vapor phase silicon precursor from the substrate; and

supplying ozone gas to the substrate during supplying the vapor phase silicon precursor and after purging and before a subsequent cycle.

21. The method of claim 20, wherein supplying ozone gas is conducted substantially continuously during the first cycle.

22. The method of claim 20, wherein the silicon precursor is represented by Formula 1:

wherein R is a straight or branched alkyl group having 1 to 4 carbons.

23. The method of claim 22, wherein the silicon precursor comprises N, N, N′

,N′

-tetraethyldiaminosilane (SiH₂[N(C₂H₅)₂]₂).

24. The method of claim 20, wherein the first cycle comprises flowing the precursor and the ozone gas in a first direction relative to the orientation of the substrate.

25. The method of claim 20, further comprising a second cycle which comprises:

supplying the vapor phase silicon precursor over the substrate;

purging the vapor phase silicon precursor from the substrate; and

supplying ozone gas to the substrate during supplying the vapor phase silicon precursor, after purging and before a subsequent cycle,

wherein the second cycle comprises flowing the precursor and the ozone gas in a second direction relative to the orientation of the substrate, the second direction being different from the first direction.

26. The method of claim 25, wherein the first cycle comprises flowing purge gas in the first direction, and wherein the second cycle comprises flowing the purge gas in the second direction.

27. The method of claim 20, wherein the deposition rate of the silicon oxide film is more than about 1.1 Å

/cycle.

28. A method of depositing a thin film over a substrate, the method comprising;

supplying a silicon source gas to a substrate; and

supplying an excited oxygen species to the substrate to form a film, such that the film has an atomic ratio of Si to O of about 0.5;

1 to about 1.1;

1.