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METHOD AND STRUCTURE USING SELECTED IMPLANT ANGLES USING A LINEAR ACCELERATOR PROCESS FOR MANUFACTURE OF FREE STANDING FILMS OF MATERIALS

  • US 20090042369A1
  • Filed: 01/25/2008
  • Published: 02/12/2009
  • Est. Priority Date: 01/29/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating free standing thickness of materials using one or more semiconductor substrates, comprising:

  • providing a semiconductor substrate having a surface region and a thickness;

    subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to define a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature, the first plurality of high energy particles being provided at a first implant angle;

    subjecting the semiconductor substrate to a treatment process;

    subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level, the semiconductor substrate being maintained at a second temperature, the second plurality of particles being provided at a second implant angle; and

    freeing the thickness of detachable material using a cleaving process.

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