SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

• US 20090042408A1
• Filed: 08/07/2008
• Published: 02/12/2009
• Est. Priority Date: 08/10/2007
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: MAEDA, Kiyohiko
• Granted Patent: US 7,858,534 B2
• Time in Patent Office: Days
• US Class Current: 438/791
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.

Claims

1. A semiconductor device manufacturing method comprising a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.

4. The semiconductor device manufacturing method according to claim 1, comprising a purge step of purging the interior of the processing chamber between the step of flowing the film forming gas from the one end towards the other end along the substrate array direction, and the step of flowing the film forming gas from the other end towards the one end along the substrate array direction, wherein the film forming gas contains dichlorosilane gas and ammonia gas, and the purge step is performed under an ammonia gas atmosphere.

5. The semiconductor device manufacturing method according to claim 1, comprising a purge step of purging the interior of the processing chamber between the step of flowing the film forming gas from the one end towards the other end along the substrate array direction, and the step of flowing the film forming gas from the other end towards the one end along the substrate array direction, wherein the film forming gas contains dichlorosilane gas and ammonia gas, and the purge step is performed utilizing ammonia gas.

6. The semiconductor device manufacturing method according to claim 1, wherein the film forming gas contains dichlorosilane gas and ammonia gas, and ammonia gas is supplied continuously without stopping, while switching the flow of the film forming gas from the one end towards the other end along the substrate array direction, to the flow from the other end towards the one end along the substrate array direction, or switching the flow of the film forming gas from the other end towards the one end along the substrate array direction, to the flow from the one end towards the other end along the substrate array direction.

2. A semiconductor device manufacturing method comprising a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a film forming step where the concentration of the film forming gas or pressure in the processing chamber becomes lower from one end towards the other end along the substrate array direction, and a film forming step where the concentration of the film forming gas or pressure in the processing chamber becomes lower from the other end towards the one end along the substrate array direction.

3. A semiconductor device manufacturing method comprising a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a film forming step where the thicknesses of the films formed on the substrates become thinner from one end towards the other end along the substrate array direction, and a film forming step where the thicknesses of the films formed on the substrates become thinner from the other end towards the one end along the substrate array direction.

7. A substrate processing apparatus comprising:

a processing chamber for processing substrates,

a support jig for holding the multiple substrates in the processing chamber,

a heater for heating the interior of the processing chamber,

a first gas supply section for supplying a film forming gas from one end side along the substrate array direction in the processing chamber,

a first gas exhaust section for exhausting the interior of the processing chamber from the other end side along the substrate array direction in the processing chamber,

a second gas supply section for supplying the film forming gas from the other end side along the substrate array direction in the processing chamber,

a second gas exhaust section for exhausting the interior of the processing chamber from the one end side along the substrate array direction in the processing chamber, and

a controller for controlling to perform a cycle one time or multiple times with one cycle including flowing the film forming gas from the one end side towards the other end side along the substrate array direction, and flowing the film forming gas from the other end side towards the one end side along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.