SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE
First Claim
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1. A substrate processing apparatus, comprising:
- a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid;
an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and
a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife.
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Abstract
In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
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Citations
20 Claims
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1. A substrate processing apparatus, comprising:
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a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification