PLASMA ETCHING METHOD AND APPARATUS THEREFOR

• US 20090045167A1
• Filed: 09/19/2008
• Published: 02/19/2009
• Est. Priority Date: 03/28/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Maruyama, Koji
• Granted Patent: US 8,052,886 B2
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32339 using electromagnetic radiation
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A fluorine-containing compound gas, e.g., SF₆ gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF₄, for which, to be more precise, ranges from 9 μm to 10 μm, the light is irradiated onto a surface of an object to be processed from the light source. The SiF₄ molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

Claims

1. A plasma etching method, comprising the steps of:

converting a process gas including a fluorine-containing compound gas into a plasma; and

etching a silicon portion of an object to be processed with the plasma,

wherein a light having a peak intensity of light in a wavelength range of light absorption of a reaction product produced by an etching is irradiated onto a surface of the object to be processed.

2. The plasma etching method of claim 1, wherein the reaction product is silicon tetrafluoride (SiF4) and the wavelength range of light absorption is from 9 μ

m to 10 μ

m.

3. The plasma etching method of claim 1, wherein the fluorine-containing compound gas includes at least one of SF6 and S2F10.

4. The plasma etching method of claim 2, wherein the fluorine-containing compound gas includes at least one of SF6 and S2F10.

5. The plasma etching method of claim 1, wherein the process gas includes oxygen gas.

6. The plasma etching method of claim 2, wherein the process gas includes oxygen gas.

7. The plasma etching method of claim 3, wherein the process gas includes oxygen gas.

8. The plasma etching method of claim 4, wherein the process gas includes oxygen gas.

12. The plasma etching method of claim 1, wherein, the process gas is introduced into a chamber by a gas supply unit, the gas supply unit including a plurality of light transmitting windows for transmitting the light from a light source, and the light transmitting windows being formed in a surface of the gas supply unit facing the object and in a surface of the gas supply unit facing the light source, and

wherein the light is irradiated uniformly onto the whole surface of the object through the light transmitting windows.

9-11. -11. (canceled)