Switch Device and Method of Fabricating the Same

• US 20090045391A1
• Filed: 06/04/2008
• Published: 02/19/2009
• Est. Priority Date: 06/27/2007
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Won, Seok-Jun
• Application Number:
  US12/132,749
• Publication Number:
  US 20090045391A1
• Time in Patent Office: Days
• US Class Current: 257/9
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/86 controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

Provided is a switch device that can be reliably turned on or off using a nanostructure that includes a nanotube and/or a nanowire. The switch device includes a lower conductive film formed on a substrate, a first insulating film formed on the lower conductive film and having a first hole that exposes at least a portion of the first lower conductive film, and a conductive film spacer formed on an inner wall of the first hole of the first insulating film. A switch device may include a nanostructure having an end electrically connected to the lower conductive film, including a nanotube and/or a nanowire, extending substantially vertically from the lower conductive film and penetrating through the first hole, and separated from the conductive film spacer with a working gap interposed therebetween.

Claims

1. A switch device, comprising:

a lower conductive film formed on a substrate;

a first insulating, film formed on the lower conductive film and including a first hole which exposes at least a portion of the lower conductive film;

a conductive film spacer formed on an inner wall of the first hole of the first insulating film; and

a nanostructure having an end electrically connected to the lower conductive film, the nanostructure comprising a nanotube and/or a nanowire, extending substantially vertically from the lower conductive film and penetrating through the first hole, and separated from the conductive film spacer with a working gap interposed therebetween.

2. The switch device of claim 1, further comprising a supporting film disposed under the first insulating film and having a second hole that exposes the at least a portion of the lower conductive film together with the first hole, wherein the nanostructure penetrates through the second hole and the first hole and extends substantially vertically.

3. The switch device of claim 2, further comprising an upper conductive film that is configured to contact the conductive film spacer and to include a sidewall aligned with the inner wall of the first hole or an inner sidewall of the conductive film spacer.

4. The switch device of claim 3, wherein the upper conductive film is formed on the first insulating film and/or between the first insulating film and the supporting film.

5. The switch device of claim 3, wherein the first insulating film comprises a first lower insulating film and a first upper insulating film that are sequentially stacked and wherein the upper conductive film is formed between the first lower insulating film and the first upper insulating film.

6. The switch device of claim 2, wherein an inner diameter of space defined by the inner sidewall of the conductive film spacer is greater than an inner diameter of the second hole and wherein the supporting film protrudes from the inner sidewall of the conductive film spacer.

7. The switch device of claim 2, wherein the working gap comprises a spacer-shaped air gap.

8. The switch device of claim 2, further comprising a catalyst layer formed on the lower conductive film, wherein one end of the nanostructure is fixed to the catalyst layer and electrically connected to the lower conductive film by the catalyst layer.

9. The switch device of claim 2, further comprising a second insulating film formed on the first insulating film, wherein the second insulating film is configured to cover the first hole and/or support the other end of the nanostructure.

10. The switch device of claim 9, wherein the second insulating film comprises a plasma chemical vapor deposition (CVD) silicon oxide film.

11. The switch device of claim 2, further comprising a second insulating film formed on the first insulating film, wherein the second insulating film comprises a line pattern that is configured to expose at least a portion of the nanostructure and at least a portion of the working gap.

12. A switch device comprising:

a first conductive film;

a nanostructure comprising a nanotube and/or a nanowire on the first conductive film, the nanostructure configured to extend substantially perpendicular to a surface of the first conductive film; and

a second conductive film configured to extend substantially parallel to the nanostructure and substantially perpendicular to the surface of the first conductive film, the second conductive film separated from the nanostructure and defining a working gap interposed therebetween.

13. The switch device of claim 12, wherein the nanostructure is configured to electrically connect or disconnect the first conductive film and the second conductive film responsive to an electro-dynamic force acting on the nanostructure.

14. A method of fabricating a switch device, the method comprising:

forming a lower conductive film on a substrate;

forming a first insulating film on the lower conductive film;

patterning the first insulating film to form a first hole in the first insulating film;

forming a conductive film spacer on an inner wall of the first hole;

forming a sacrificial spacer on a sidewall of the conductive film spacer;

forming a nanostructure including one end electrically connected to the lower conductive film, the nanostructure comprising a nanotube and/or a nanowire, the nanostructure extending substantially vertically from the lower conductive film and penetrating through the first hole; and

removing the sacrificial spacer to define a working gap interposed between the nanostructure and the conductive film spacer.

15. The method of claim 14, further comprising:

forming a supporting film on the lower conductive film before forming the first insulating film; and

forming a second hole, which exposes the lower conductive film, in the supporting film by etching the supporting film using the sacrificial spacer as an etch mask after forming the sacrificial spacer,

wherein the nanostructure is formed to penetrate through the second hole and the first hole and extend substantially vertically.

16. The method of claim 15, further comprising:

forming a film for at least one upper conductive film before forming the first insulating film; and

forming an upper conductive film that includes a sidewall aligned with an inner sidewall of the sacrificial spacer by patterning the film for the at least one upper conductive film after forming the sacrificial spacer.

17. The method of claim 15, further comprising:

forming a film for at least one upper conductive film after forming the first insulating film; and

forming an upper conductive film that includes a sidewall aligned with the inner wall of the first hole by patterning the film for the at least one upper conductive film after forming the first hole.

18. The method of claim 15,

wherein forming the first insulating film comprises forming a first lower insulating film and forming a first upper insulating film,

wherein forming the first insulating film comprises:

forming the first lower insulating film on the supporting film;

forming a film for at least one upper conductive film on the first lower insulating film; and

forming the first upper insulating film on the film for at least one upper conductive film,

wherein patterning the first insulating film comprises patterning the first upper insulating film, the film for at least one upper conductive film and the first lower insulating film,

wherein patterning the upper conductive films comprises forming an upper conductive film that has a sidewall aligned with the inner wall of the first hole.

19. The method of claim 15, further comprising forming a catalyst layer on the lower conductive film, wherein forming the nanostructure comprises vertically growing the nanostructure on the catalyst layer.

20. The method of claim 15, wherein removing the sacrificial spacer comprises performing a wet-etching process.

21-29. -29. (canceled)