Switch Device and Method of Fabricating the Same
First Claim
1. A switch device, comprising:
- a lower conductive film formed on a substrate;
a first insulating, film formed on the lower conductive film and including a first hole which exposes at least a portion of the lower conductive film;
a conductive film spacer formed on an inner wall of the first hole of the first insulating film; and
a nanostructure having an end electrically connected to the lower conductive film, the nanostructure comprising a nanotube and/or a nanowire, extending substantially vertically from the lower conductive film and penetrating through the first hole, and separated from the conductive film spacer with a working gap interposed therebetween.
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Accused Products
Abstract
Provided is a switch device that can be reliably turned on or off using a nanostructure that includes a nanotube and/or a nanowire. The switch device includes a lower conductive film formed on a substrate, a first insulating film formed on the lower conductive film and having a first hole that exposes at least a portion of the first lower conductive film, and a conductive film spacer formed on an inner wall of the first hole of the first insulating film. A switch device may include a nanostructure having an end electrically connected to the lower conductive film, including a nanotube and/or a nanowire, extending substantially vertically from the lower conductive film and penetrating through the first hole, and separated from the conductive film spacer with a working gap interposed therebetween.
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Citations
21 Claims
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1. A switch device, comprising:
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a lower conductive film formed on a substrate; a first insulating, film formed on the lower conductive film and including a first hole which exposes at least a portion of the lower conductive film; a conductive film spacer formed on an inner wall of the first hole of the first insulating film; and a nanostructure having an end electrically connected to the lower conductive film, the nanostructure comprising a nanotube and/or a nanowire, extending substantially vertically from the lower conductive film and penetrating through the first hole, and separated from the conductive film spacer with a working gap interposed therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A switch device comprising:
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a first conductive film; a nanostructure comprising a nanotube and/or a nanowire on the first conductive film, the nanostructure configured to extend substantially perpendicular to a surface of the first conductive film; and a second conductive film configured to extend substantially parallel to the nanostructure and substantially perpendicular to the surface of the first conductive film, the second conductive film separated from the nanostructure and defining a working gap interposed therebetween. - View Dependent Claims (13)
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14. A method of fabricating a switch device, the method comprising:
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forming a lower conductive film on a substrate; forming a first insulating film on the lower conductive film; patterning the first insulating film to form a first hole in the first insulating film; forming a conductive film spacer on an inner wall of the first hole; forming a sacrificial spacer on a sidewall of the conductive film spacer; forming a nanostructure including one end electrically connected to the lower conductive film, the nanostructure comprising a nanotube and/or a nanowire, the nanostructure extending substantially vertically from the lower conductive film and penetrating through the first hole; and removing the sacrificial spacer to define a working gap interposed between the nanostructure and the conductive film spacer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21-29. -29. (canceled)
Specification