FIELD EFFECT TRANSISTOR WITH GATE INSULATION LAYER FORMED BY USING AMORPHOUS OXIDE FILM

• US 20090045399A1
• Filed: 03/17/2007
• Published: 02/19/2009
• Est. Priority Date: 03/20/2006
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kaji, Nobuyuki, Yabuta, Hisato
• Application Number:
  US12/282,841
• Publication Number:
  US 20090045399A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A field effect transistor includes a channel layer 11, a source electrode 13, a drain electrode 14, a gate insulation layer 12 and a gate electrode 15 formed on a substrate 10. The channel layer is made of an amorphous oxide and that the gate insulation layer is made of an amorphous oxide containing Y.

Claims

1. A field effect transistor comprising a channel layer, a source electrode, a drain electrode, a gate insulation layer, and a gate electrode formed on a substrate, wherein the channel layer is made of an amorphous oxides and wherein the gate insulation layer is made of an amorphous oxide containing Y.

2. The transistor according to claim 1, wherein the amorphous oxide containing Y is an oxide containing Mn or Ti in addition to Y, and includes a composition that produces a perovskite structure when formed under conditions for crystallization.

3. The transistor according to claim 1, wherein the channel layer is made of an amorphous oxide containing at least one of:

In, Ga, and Zn.

4. The transistor according to claim 1, wherein the substrate, the source electrode, the drain electrode, and the gate electrode are made of respective transparent materials.

5. The transistor according to claim 1, wherein the substrate is a flexible plastic film, and wherein the source electrode, the drain electrode, and the gate electrode are made of respective transparent materials.

6. A transistor according to claim 1, wherein the transistor is part of a display apparatus that includes a display element having an electrode connected to the source electrode or the drain electrode of the transistor.

7. The transistor according to claim 6, wherein the display element is an electroluminescent device.

8. The transistor according to claim 6, wherein the display element is a liquid crystal cell.

9. The transistor according to claim 6, wherein a plurality of display elements and a plurality of field effect transistors are arranged two-dimensionally on a substrate.