SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A CURRENT-BLOCKING LAYER FORMED BETWEEN A SEMICONDUCTOR MULTILAYER FILM AND A METAL FILM AND LOCATED AT THE PERIPHERY., METHOD FOR FABRICATING THE SAME AND METHOD FOR BONDING THE SAME

• US 20090045431A1
• Filed: 07/08/2008
• Published: 02/19/2009
• Est. Priority Date: 06/25/2002
• Status: Abandoned Application

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: UEDA, Tetsuzo, Yuri, Masaaki
• Application Number:
  US12/169,441
• Publication Number:
  US 20090045431A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.

Claims

1-33. -33. (canceled)

34. A semiconductor light-emitting diode comprising:

a semiconductor multilayer film including at least two semiconductor layers having mutually different conductivity types;

a first electrode formed on a surface of the semiconductor multilayer film;

a second electrode formed on a surface of the semiconductor multilayer film opposite to the surface of the semiconductor multilayer film on which the first electrode is formed;

a metal film formed to be electrically in contact with one of the first and second electrodes; and

a current-blocking layer formed between the semiconductor multilayer film and the metal film at a periphery of the semiconductor multilayer film and the metal film.

35. The semiconductor light-emitting diode of claim 34,

wherein a light emitted from the semiconductor multilayer film is extracted to the direction substantially perpendicular to the surface of the first electrode.

36. The semiconductor light-emitting diode of claim 35,

wherein the first electrode is directly in contact with the current-blocking layer.

37. The semiconductor light-emitting diode of claim 36,

wherein the current-blocking layer is made of a dielectric.