SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A CURRENT-BLOCKING LAYER FORMED BETWEEN A SEMICONDUCTOR MULTILAYER FILM AND A METAL FILM AND LOCATED AT THE PERIPHERY., METHOD FOR FABRICATING THE SAME AND METHOD FOR BONDING THE SAME
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Abstract
A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.
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Citations
37 Claims
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1-33. -33. (canceled)
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34. A semiconductor light-emitting diode comprising:
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a semiconductor multilayer film including at least two semiconductor layers having mutually different conductivity types; a first electrode formed on a surface of the semiconductor multilayer film; a second electrode formed on a surface of the semiconductor multilayer film opposite to the surface of the semiconductor multilayer film on which the first electrode is formed; a metal film formed to be electrically in contact with one of the first and second electrodes; and a current-blocking layer formed between the semiconductor multilayer film and the metal film at a periphery of the semiconductor multilayer film and the metal film. - View Dependent Claims (35, 36, 37)
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Specification