Stamp having nanoscale structure and applications therefore in light-emitting device

• US 20090045435A1
• Filed: 08/12/2008
• Published: 02/19/2009
• Est. Priority Date: 08/13/2007
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun, Yao, Chiu-Lin, Hsu, Ta-Cheng
• Granted Patent: US 8,791,029 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.

Claims

1. A nanoscale stamp structure comprising:

a substrate;

a stamp layer deposited on the substrate, wherein one of the surface of the stamp layer having a nanoscale structure; and

a buffer layer deposited between the substrate and the stamp layer.

2. The nanoscale stamp structure according to claim 1, wherein the substrate is aluminum oxide or silicon.

3. The nanoscale stamp structure according to claim 1, wherein the material of stamp layer is un-doped gallium nitride or n-type gallium nitride.

4. The nanoscale stamp structure according to claim 1, wherein the thickness of the stamp layer is more than 5000 Å

.

5. The nanoscale stamp structure according to claim 1, wherein the pattern of the nanoscale structure is sized from 10 nm to 1000 nm and with a period in a range of 20 nm to 2000 nm.

6. The nanoscale stamp structure according to claim 1, wherein the pattern of the nanoscale structure is serrated shape.

7. The nanoscale stamp structure according to claim 1, wherein the buffer layer is gallium nitride series materials, metal or dielectric material.

18. The method of forming a light-emitting device comprising the steps of:

forming an epitaxial substrate;

forming an epitaxial structure on the epitaxial substrate;

wherein the epitaxial structure comprising a least a n-type semiconductor layer, a lighting-emitting layer and a p-type semiconductor layer;

forming a transparent conductive layer on the epitaxial structure;

forming a buffer layer on the stamp layer; and

forming a nanoscale pattern on at least one of the surface of the layer said above;

wherein the nanoscale pattern is imprinted by the nanoscale stamp structure according to claim 1.

8. A method of forming a nanoscale stamp structure comprising the steps of:

forming a substrate;

forming a buffer layer on the substrate; and

forming a stamp layer on the buffer layer, wherein one of the surface of the stamp layer having a nanoscale structure.

9. The method of forming a nanoscale stamp structure according to claim 8, wherein the material of stamp layer is un-doped gallium nitride or n-type gallium nitride.

10. The method of forming a nanoscale stamp structure according to claim 8, wherein the nanoscale pattern is formed by metal-organic chemical vapor deposition process (MOCVD) or wet etched by potassium hydroxide (KOH).

11. The method of forming a nanoscale stamp structure according to claim 8, wherein the buffer layer is gallium nitride series materials, metal or dielectric material.

19. The method of forming a light-emitting device comprising the steps of:

forming a epitaxial substrate;

forming a epitaxial structure on the epitaxial substrate;

wherein the epitaxial structure comprising a least a n-type semiconductor layer, a lighting-emitting layer and a p-type semiconductor layer;

forming a transparent conductive layer on the epitaxial structure; and

forming a nanoscale pattern on at least one of the surface of the layer said above;

wherein the nanoscale pattern is imprinted by the nanoscale stamp structure manufactured by the method for manufacturing a nanoscale stamp structure according to claim 8.

12. A method of forming a nanoscale stamp structure comprising the steps of:

forming a temporary substrate;

forming a connecting layer on the temporary substrate;

forming a stamp layer on the connecting layer;

forming a buffer layer on the stamp layer;

forming a permanent substrate on the buffer layer;

removing the temporary substrate;

removing the connecting layer;

etching one surface of the stamp layer, wherein the surface is not contiguous to the buffer layer.

13. The method of forming a nanoscale stamp structure according to claim 12, wherein the temporary substrate is aluminum oxide.

14. The method of forming a nanoscale stamp structure according to claim 12, wherein the connecting layer is gallium nitride series materials.

15. The method of forming a nanoscale stamp structure according to claim 12, wherein the material of the stamp layer is un-doped gallium nitride or n-type gallium nitride.

16. The method of forming a nanoscale stamp structure according to claim 12, wherein the buffer layer is metal or dielectric material.

17. The method of forming a nanoscale stamp structure according to claim 12, wherein the surface of the stamp layer is etched by 80°

C. etching solution of potassium hydroxide (KOH) in 3 minutes.

20. The method of forming a light-emitting device comprising the steps of:

forming a epitaxial substrate;

forming a epitaxial structure on the epitaxial substrate;

wherein the epitaxial structure comprising a least a n-type semiconductor layer, a lighting-emitting layer and a p-type semiconductor layer;

forming a transparent conductive layer on the epitaxial structure; and

forming a nanoscale pattern on at least one of the surface of the layer said above;

wherein the nanoscale pattern is imprinted by the nanoscale stamp structure manufactured by the method for manufacturing a nanoscale stamp structure according to claim 12.