Structure and Method of Sub-Gate NAND Memory with Bandgap Engineered SONOS Devices
First Claim
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1. An integrated circuit, comprising:
- a semiconductor body;
a plurality of AND device structures, comprising;
a first plurality of parallel structures over the semiconductor body, respective parallel structures in the first plurality of parallel structures including a sub-gate positioned to create an inversion layer in the semiconductor body under the respective parallel structure in the first plurality of parallel structures; and
a second plurality of parallel structures over the semiconductor body, the second plurality of parallel structures having a substantially perpendicular orientation relative to the first plurality of parallel structures, respective parallel structures in the second plurality of parallel structures including;
a tunneling dielectric layer on the semiconductor body;
a charge trapping layer on the tunnel dielectric layer;
a blocking dielectric layer on the charge trapping layer; and
a control gate on the blocking dielectric layer.
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Abstract
A bandgap engineered SONOS device structure for design with various AND architectures. The BE-SONOS device structure comprises a spacer oxide disposed between a control gate overlaying an oxide-nitride-oxide-nitride-oxide stack and a sub-gate overlaying a gate oxide. In one example, a BE-SONOS sub-gate-AND array architecture has multiple strings of SONONOS devices with sub-gate lines and diffusion bit lines. In another example, a BE-SONOS sub-gate-AND architecture has multiple strings of SONONOS devices with sub-gate lines, relying on the sub-gate lines that create inversions to substitute for the diffusion bit lines.
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Citations
14 Claims
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1. An integrated circuit, comprising:
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a semiconductor body; a plurality of AND device structures, comprising; a first plurality of parallel structures over the semiconductor body, respective parallel structures in the first plurality of parallel structures including a sub-gate positioned to create an inversion layer in the semiconductor body under the respective parallel structure in the first plurality of parallel structures; and a second plurality of parallel structures over the semiconductor body, the second plurality of parallel structures having a substantially perpendicular orientation relative to the first plurality of parallel structures, respective parallel structures in the second plurality of parallel structures including; a tunneling dielectric layer on the semiconductor body; a charge trapping layer on the tunnel dielectric layer; a blocking dielectric layer on the charge trapping layer; and a control gate on the blocking dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An integrated circuit, comprising:
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a semiconductor body; a first device structure positioned to create a read current in the semiconductor body under the first device structure, including; a tunneling dielectric layer on the semiconductor body; a charge trapping layer on the tunnel dielectric layer; a blocking dielectric layer on the charge trapping layer; and a control gate on the blocking dielectric layer; and a second device structure proximate to the first device structure and including a sub-gate positioned to create an inversion layer in the semiconductor body under the second device structure to control read access of the adjacent first device structure without controlling read access of nonadjacent device structures.
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Specification