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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20090045465A1
  • Filed: 06/30/2008
  • Published: 02/19/2009
  • Est. Priority Date: 08/13/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • etching a substrate to form a recess pattern;

    forming a gate dielectric layer over the recess pattern;

    forming a gate electrode over the gate dielectric layer inside the recess pattern, wherein the gate electrode does not extend above a surface of the substrate;

    forming a gate hard mask pattern over the gate electrode and upper corners of the recess pattern; and

    forming a plug over the substrate between the gate hard mask pattern and an adjacent gate hard mask pattern.

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